Impact of surface traps on the breakdown voltage of passivated AlGaN/GaN HEMTs under high-field stress

2012 ◽  
Vol 7 (11) ◽  
pp. 1140-1142
Author(s):  
Ziqi Zhao ◽  
Qian Luo ◽  
Jiangfeng Du ◽  
Mohua Yang
Keyword(s):  
Breakdown Voltage ◽  
High Field ◽  
Field Stress ◽  
Gan Hemts

scholarly journals Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs

2009 ◽  
Vol 58 (1) ◽  
pp. 511
Author(s):  
Gu Wen-Ping ◽  
Hao Yue ◽  
Zhang Jin-Cheng ◽  
Wang Chong ◽  
Feng Qian ◽  
...  
Keyword(s):  
High Field ◽  
Field Stress ◽  
Gan Hemts

scholarly journals High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs

2016 ◽  
Vol 16 (3) ◽  
pp. 282-289 ◽  
Author(s):  
Jin Chen ◽  
Yevgeniy S. Puzyrev ◽  
En Xia Zhang ◽  
Daniel M. Fleetwood ◽  
Ronald D. Schrimpf ◽  
...  
Keyword(s):  
High Field ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Field Stress ◽  
Gan Hemts

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

2018 ◽  
Vol 18 (3) ◽  
pp. 364-376 ◽  
Author(s):  
Rong Jiang ◽  
Xiao Shen ◽  
Jingtian Fang ◽  
Pan Wang ◽  
En Xia Zhang ◽  
...  
Keyword(s):  
High Field ◽  
Field Stress ◽  
Multiple Defects ◽  
Gan Hemts

Oxide wearout phenomena of ultrathin SiO2 film during high-field stress

1992 ◽  
Vol 28 (16) ◽  
pp. 1516 ◽  
Author(s):  
H. Fukuda ◽  
M. Yasuda ◽  
T. Iwabuchi
Keyword(s):  
High Field ◽  
Sio2 Film ◽  
Field Stress

scholarly journals Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 406 ◽  
Author(s):  
Biyan Liao ◽  
Quanbin Zhou ◽  
Jian Qin ◽  
Hong Wang
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Structural Parameters ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Insulator Layer ◽  
Field Plate ◽  
2D Simulation ◽  
Gan Hemts ◽  
Drain Field

A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

scholarly journals High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

2004 ◽  
Vol 25 (4) ◽  
pp. 161-163 ◽  
Author(s):  
H. Xing ◽  
Y. Dora ◽  
A. Chini ◽  
S. Heikman ◽  
S. Keller ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Gan Hemts ◽  
Multiple Field
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