scholarly journals Enhancing ultraviolet photoresponse of ZnO nanowire device by surface functionalization

2008 ◽  
Vol 57 (12) ◽  
pp. 7855
Author(s):  
Huang Jin-Hua ◽  
Zhang Kun ◽  
Pan Nan ◽  
Gao Zhi-Wei ◽  
Wang Xiao-Ping
Keyword(s):  
Surface Functionalization ◽  
Zno Nanowire ◽  
Nanowire Device

scholarly journals Low-Cost, Large-Area, Facile, and Rapid Fabrication of Aligned ZnO Nanowire Device Arrays

2016 ◽  
Vol 8 (21) ◽  
pp. 13466-13471 ◽  
Author(s):  
Gerard Cadafalch Gazquez ◽  
Sidong Lei ◽  
Antony George ◽  
Hemtej Gullapalli ◽  
Bernard A. Boukamp ◽  
...  
Keyword(s):  
Low Cost ◽  
Zno Nanowire ◽  
Large Area ◽  
Rapid Fabrication ◽  
Nanowire Device

Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization

2015 ◽  
Vol 26 (9) ◽  
pp. 095202 ◽  
Author(s):  
Cheng Han ◽  
Du Xiang ◽  
Minrui Zheng ◽  
Jiadan Lin ◽  
Jianqiang Zhong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Functionalization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire

Zinc Oxide Nanowire Sensor Packaging

2018 ◽  
Vol 2018 (1) ◽  
pp. 000447-000451
Author(s):  
Bruce Kim ◽  
Sang-Bock Cho
Keyword(s):  
Zinc Oxide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanowire ◽  
Single Nanowire ◽  
Edax Analysis ◽  
Nanowire Sensor ◽  
Zinc Oxide Nanowire ◽  
Nanowire Device

Abstract This paper describes nano device packaging topology using array of ZnO nanowire-based devices. The single nanowire device has been fabricated through focused ion beam and e-beam lithography techniques while the SEM and EDAX analysis have been used to characterize the device. The IV characteristics of the ZnO nanowire-based array devices have been measured through a semiconductor parameter analyzer.

scholarly journals Fabrication of ZnO nanowire device using top-down approach

2011 ◽  
Author(s):  
S. M. Sultan ◽  
K. Sun ◽  
J. Partridge ◽  
M. Allen ◽  
P. Ashburn ◽  
...  
Keyword(s):  
Zno Nanowire ◽  
Top Down ◽  
Nanowire Device

Contact barriers in a single ZnO nanowire device

2008 ◽  
Vol 94 (2) ◽  
pp. 253-256 ◽  
Author(s):  
Kanghyun Kim ◽  
Haeyong Kang ◽  
Hyeyoung Kim ◽  
Jong Soo Lee ◽  
Sangtae Kim ◽  
...  
Keyword(s):  
Zno Nanowire ◽  
Nanowire Device

Fabrication and Atmospheric-Pressure-Dependent Electrical Properties of a ZnO Nanowire Device

2007 ◽  
Vol 51 (12) ◽  
pp. 170 ◽  
Author(s):  
E.-K KIM ◽  
H.-Y. LEE ◽  
J. PARK ◽  
S. J. PARK ◽  
J. H. KWAK ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atmospheric Pressure ◽  
Zno Nanowire ◽  
Nanowire Device

Electrical Transport Phenomena of Single ZnO Nanowire Device Directly Measured Using Nano Manipulator

2010 ◽  
Vol 1258 ◽  
Author(s):  
Sang Won Yoon ◽  
Jong-Hyun Seo ◽  
Tae-Yeon Seong ◽  
Hoon Kwon ◽  
Kon Bae Lee ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Piezoresponse Force Microscopy ◽  
Contact Problems ◽  
Electrical Mobility ◽  
Zno Nanowire ◽  
The Cross ◽  
Nanowire Device

AbstractZnO nanowire (NW) has potential applications for transparent electrodes, gas sensors, nanoscale optoelectronic devices, piezoresponse force microscopy (PFM) and field effect transistors. In general, we have evaluated the electrical properties of nanowire device from I-V curves measured mainly from the bundle-like ensemble structure of ZnO, not individual ZnO NWs. Most applications require details on the electrical mobility of ZnO NWs. Recently, the electrical transport of single ZnO NWs has been studied only from several devices fabricated by electron-beam lithography. However their I-V curves categorized into three types of resistance, i.e., symmetrical, rectifying and linear shapes due to contact problems between ZnO NWs and electrodes, results in contradictory.In this paper, we manufactured single NW device using an individual ZnO nanowire, of which the junctions were made by Pt deposition using a focused ion beam (FIB), and performed RTA processes. The single ZnO NW device consists of ZnO-Pt, ZnO-Au and Au-Pt junctions. The electrical transport of the single ZnO NW device was investigated by directly measuring the electrical resistance using nano manipulators from cross-sectioned devices. The device showed a typical Ohmic contact in I-V curves and the resistance was decrease with the RTA temperature. The CL (Cathodoluminescence) and EDS in TEM (Energy dispersive spectroscopy in transmission electron microscopy) measurements were also performed to evaluate the crystallinity (defect level) and chemical composition at the center and edge of the cross-sectioned ZnO NWs. From the results, we found that lots of defects were stored at the surface of ZnO NW and impurities at the junction were abruptly reduced. Therefore, the electrical transport of the single ZnO NW device depends strongly on the crystallinity of the ZnO NW and the C content at the Pt junction. From the electrical transport measured on the cross sectioned device, the ZnO-Au junction acted as the fastest transport path among ZnO-Pt, ZnO-Au and Au-Pt junctions in the single ZnO NW device.

High-temperature gold metallization for ZnO nanowire device on a SiC substrate

2012 ◽  
Vol 111 (12) ◽  
pp. 124307 ◽  
Author(s):  
Ron Gurwitz ◽  
Guy Tuboul ◽  
Boaz Shikler ◽  
Ilan Shalish
Keyword(s):  
High Temperature ◽  
Zno Nanowire ◽  
Nanowire Device ◽  
Gold Metallization

scholarly journals Persistent Photoconductivity in ZnO Nanowires in Different Atmospheres

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Davide Cammi ◽  
Carsten Ronning
Keyword(s):  
Conduction Band ◽  
Inert Gas ◽  
Persistent Photoconductivity ◽  
Zno Nanowire ◽  
Reduced Pressure ◽  
Band Bending ◽  
Proposed Model ◽  
Photo Conductivity ◽  
Nanowire Device ◽  
Uv Excitation

We investigated the photoconductivity of single ZnO nanowire device as a function of the surrounding atmosphere, considering the comparison between reduced pressure, inert gas environments, and air. We show that after UV excitation the photocurrent persists for hours, in particular in vacuum, nitrogen, and argon. In the presence of oxygen, the photodecay rate is initially fast but then becomes considerably slower, resulting in a long persisting photo-conductivity tail. Our proposed model explains the persistence of the photoconductivity (PPC) in terms of band bending at the surface of the nanowires, which is related to the trapping of electrons from the conduction band.

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