scholarly journals Influence of substrate temperature on the structure and photoluminescence of Mg0.05Zn0.95O thin films grown by pulsed laser deposition

2008 ◽  
Vol 57 (6) ◽  
pp. 3735
Author(s):  
Wu Xiao-Li ◽  
Chen Chang-Le ◽  
Han Li-An ◽  
Luo Bing-Cheng ◽  
Gao Guo-Mian ◽  
...  
2006 ◽  
Vol 514-516 ◽  
pp. 1029-1033
Author(s):  
Eugenio Luís Solla ◽  
Jacinto P. Borrajo ◽  
Pio González ◽  
Julia Serra ◽  
Stefano Chiussi ◽  
...  

The bioactive properties of hydroxyapatite (HA) are well known in the implant industry and coatings of HA have been used to enhance the adhesion of living tissue to metal prostheses. Pulsed laser deposition (PLD) in a water vapour atmosphere is an appropriate method for the production of crystalline HA coatings. In this work the effect of RF plasma on thin films of HA grown by PLD at different substrate temperatures has been studied. The physicochemical properties of the films were studied by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS), showing that the incorporation of RF discharge in the deposition chamber can lead to changes in the crystallinity and deposition rate of the films but substrate temperature still plays the most important role.


2016 ◽  
Vol 42 (11) ◽  
pp. 12783-12788 ◽  
Author(s):  
Xu Wang ◽  
Zhengwei Chen ◽  
Fabi Zhang ◽  
Katsuhiko Saito ◽  
Tooru Tanaka ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 5A) ◽  
pp. 2710-2716 ◽  
Author(s):  
Frederick Ojo Adurodija ◽  
Hirokazu Izumi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
Hiroshi Matsui ◽  
...  

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.


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