scholarly journals Theoretical study of native point defects on anatase TiO2 (101) surface

2008 ◽  
Vol 57 (5) ◽  
pp. 3120
Author(s):  
Ma Xin-Guo ◽  
Jiang Jian-Jun ◽  
Liang Pei
Keyword(s):  
Point Defects ◽  
Theoretical Study ◽  
Anatase Tio2 ◽  
Native Point Defects

Theoretical Study on the Point Defects in N-Doped Anatase TiO2

2008 ◽  
Vol 53 (9(4)) ◽  
pp. 2292-2298 ◽  
Author(s):  
Fei Pei ◽  
Song Wu ◽  
Gang Wang ◽  
Ming Xu ◽  
Song-You Wang ◽  
...  
Keyword(s):  
Point Defects ◽  
Theoretical Study ◽  
Anatase Tio2

Theoretical Study of Optical Properties of Native Point Defects in α-Al2O3

2014 ◽  
Vol 156 (1) ◽  
pp. 79-85 ◽  
Author(s):  
Teeraphat Watcharatharapong ◽  
Jiraroj T-Thienprasert ◽  
Sukit Limpijumnong
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Theoretical Study ◽  
Native Point Defects ◽  
Α Al2o3

Stability and mobility of native point defects in AlH3

2011 ◽  
Vol 509 ◽  
pp. S658-S661 ◽  
Author(s):  
Lars Ismer ◽  
Anderson Janotti ◽  
Chris G. Van de Walle
Keyword(s):  
Point Defects ◽  
Native Point Defects

Hg1-xCdxTe: Defect Structure Overview

1990 ◽  
Vol 216 ◽  
Author(s):  
M.A. Berding ◽  
A. Sher ◽  
A.-B. Chen
Keyword(s):  
Point Defects ◽  
Defect Structure ◽  
Defect Formation ◽  
Activation Energies ◽  
Mass Action ◽  
Native Defect ◽  
Native Point Defects ◽  
Vacancy Migration ◽  
Formation Energies ◽  
Diffusion Activation

ABSTRACTNative point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Room Temperature ◽  
Vanadium Content ◽  
Mapping Technique ◽  
Native Defect ◽  
Room Temperature Photoluminescence ◽  
Native Point Defects ◽  
Pl Mapping ◽  
Resistivity Variation

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

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