scholarly journals Infrared absorption of VO2 based Mott transition field effect transistor dependent on optical phonon in α-SiN: H films

2007 ◽  
Vol 56 (9) ◽  
pp. 5221
Author(s):  
Chen Chang-Hong ◽  
Huang De-Xiu ◽  
Zhu Peng
Keyword(s):  
Infrared Absorption ◽  
Optical Phonon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Mott Transition ◽  
Effect Transistor ◽  
Transition Field

Mott transition field effect transistor

1998 ◽  
Vol 73 (6) ◽  
pp. 780-782 ◽  
Author(s):  
D. M. Newns ◽  
J. A. Misewich ◽  
C. C. Tsuei ◽  
A Gupta ◽  
B. A. Scott ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Mott Transition ◽  
Effect Transistor ◽  
Transition Field

scholarly journals A field effect transistor based on the Mott transition in a molecular layer

1997 ◽  
Vol 70 (5) ◽  
pp. 598-600 ◽  
Author(s):  
C. Zhou ◽  
D. M. Newns ◽  
J. A. Misewich ◽  
P. C. Pattnaik
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Molecular Layer ◽  
Mott Transition ◽  
Effect Transistor

scholarly journals Control of Organic Superconducting Field-Effect Transistor by Cooling Rate

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 605
Author(s):  
Genta Kawaguchi ◽  
Hiroshi Yamamoto
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Cooling Rate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Mott Transition ◽  
Strongly Correlated ◽  
Effect Transistor ◽  
Ethylene Group ◽  
Insight Into

A new superconducting field-effect transistor (FET) in the vicinity of bandwidth-controlled Mott transition was developed using molecular strongly correlated system κ-(BEDT-TTF)2Cu[N(CN)2]Br [BEDT-TTF = bis(ethylenedithio)tetrathiafulvalene] laminated on CaF2 substrate. This device exhibited significant cooling-rate dependence of resistance below about 80 K, associated with glass transition of terminal ethylene group of BEDT-TTF molecule, where more rapid cooling through glass transition temperature leads to the decrease in bandwidth. We demonstrated that the FET properties such as ON/OFF ratio and polarity can be controlled by utilizing cooling rate. Our result may give a novel insight into the design of molecule-based functional devices.

Field Effect of Fullerene Thin Film Studied by Displacement Current Measurements and Infrared Absorption Spectroscopy in The Multiple Reflection Geometry

2003 ◽  
Vol 771 ◽  
Author(s):  
S. Ogawa ◽  
Y. Kimura ◽  
H. Ishii ◽  
M. Niwano
Keyword(s):  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electron Injection ◽  
Lateral Spread ◽  
Displacement Current ◽  
Infrared Absorption Spectroscopy ◽  
Effect Transistor

AbstractAu/fullerene(C60)/SiO2/Si field effect transistor (FET) has been investigated to examine the behavior of carrier injection by using displacement current measurement (DCM) and infrared absorption spectroscopy in the multiple internal reflection (MIR-IRAS). At the first scan of DCM, an increasing displacement current due to electron injection was clearly observed above a threshold voltage in forward scan, while no flow-back of the injected electrons was observed, indicating that almost all electrons injected in the scan were trapped. The capacitance obtained from the increasing current suggests that the electrons injected from a Au electrode spread laterally along C60/SiO2 to some extent. At the further scans of DCM, the threshold voltage was shifted to higher voltage, and the lateral spread of the electron was quite suppressed due to the space charge of the filled traps. These results clearly demonstrate that DCM is a useful method to examine the behavior of carriers in field effect transistor (FET) devices. The spectral change in MIR-IRAS observed under bias voltage for electron injection is also reported.

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