scholarly journals A field effect transistor based on the Mott transition in a molecular layer

1997 ◽  
Vol 70 (5) ◽  
pp. 598-600 ◽  
Author(s):  
C. Zhou ◽  
D. M. Newns ◽  
J. A. Misewich ◽  
P. C. Pattnaik
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Molecular Layer ◽  
Mott Transition ◽  
Effect Transistor

Mott transition field effect transistor

1998 ◽  
Vol 73 (6) ◽  
pp. 780-782 ◽  
Author(s):  
D. M. Newns ◽  
J. A. Misewich ◽  
C. C. Tsuei ◽  
A Gupta ◽  
B. A. Scott ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Mott Transition ◽  
Effect Transistor ◽  
Transition Field

scholarly journals Control of Organic Superconducting Field-Effect Transistor by Cooling Rate

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 605
Author(s):  
Genta Kawaguchi ◽  
Hiroshi Yamamoto
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Cooling Rate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Mott Transition ◽  
Strongly Correlated ◽  
Effect Transistor ◽  
Ethylene Group ◽  
Insight Into

A new superconducting field-effect transistor (FET) in the vicinity of bandwidth-controlled Mott transition was developed using molecular strongly correlated system κ-(BEDT-TTF)2Cu[N(CN)2]Br [BEDT-TTF = bis(ethylenedithio)tetrathiafulvalene] laminated on CaF2 substrate. This device exhibited significant cooling-rate dependence of resistance below about 80 K, associated with glass transition of terminal ethylene group of BEDT-TTF molecule, where more rapid cooling through glass transition temperature leads to the decrease in bandwidth. We demonstrated that the FET properties such as ON/OFF ratio and polarity can be controlled by utilizing cooling rate. Our result may give a novel insight into the design of molecule-based functional devices.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document