scholarly journals Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

2006 ◽  
Vol 55 (7) ◽  
pp. 3677
Author(s):  
Li Dong-Lin ◽  
Zeng Yi-Ping
Keyword(s):  
Theoretical Analysis ◽  
Layer Thickness ◽  
Electron Mobility ◽  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
2D Electron Gas ◽  
Channel Layer ◽  
Electron Mobility Transistors

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

2016 ◽  
Vol 55 (4) ◽  
pp. 040306 ◽  
Author(s):  
Yusuke Takei ◽  
Kazuo Tsutsui ◽  
Wataru Saito ◽  
Kuniyuki Kakushima ◽  
Hitoshi Wakabayashi ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Algan Layer ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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