Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

Pil Sung Park; Digbijoy N. Nath; Sriram Krishnamoorthy; Siddharth Rajan

doi:10.1063/1.3685483

Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

Applied Physics Letters ◽

10.1063/1.3685483 ◽

2012 ◽

Vol 100 (6) ◽

pp. 063507 ◽

Cited By ~ 23

Author(s):

Pil Sung Park ◽

Digbijoy N. Nath ◽

Sriram Krishnamoorthy ◽

Siddharth Rajan

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A simple yet comprehensive unified physical model of the 2D electron gas in delta-doped and uniformly doped high electron mobility transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.817562 ◽

2000 ◽

Vol 47 (1) ◽

pp. 11-23 ◽

Cited By ~ 12

Author(s):

S. Karmalkar ◽

G. Ramesh

Keyword(s):

Physical Model ◽

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

2D Electron Gas ◽

Electron Mobility Transistors

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Organic High Electron Mobility Transistors Realized by 2D Electron Gas

Advanced Materials ◽

10.1002/adma.201702427 ◽

2017 ◽

Vol 29 (34) ◽

pp. 1702427 ◽

Cited By ~ 7

Author(s):

Panlong Zhang ◽

Haibo Wang ◽

Donghang Yan

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

2D Electron Gas ◽

Electron Mobility Transistors

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Analysis of energy states of two-dimensional electron gas in pseudomorphically strained InSb high-electron-mobility transistors taking into account the nonparabolicity of the conduction band

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.084301 ◽

2016 ◽

Vol 55 (8) ◽

pp. 084301 ◽

Cited By ~ 1

Author(s):

Yui Nishio ◽

Takato Sato ◽

Naomi Hirayama ◽

Tsutomu Iida ◽

Yoshifumi Takanashi

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas

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Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

Acta Physica Sinica ◽

10.7498/aps.55.3677 ◽

2006 ◽

Vol 55 (7) ◽

pp. 3677

Author(s):

Li Dong-Lin ◽

Zeng Yi-Ping

Keyword(s):

Theoretical Analysis ◽

Layer Thickness ◽

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

2D Electron Gas ◽

Channel Layer ◽

Electron Mobility Transistors

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Comparison between theoretical and experimental results for energy states of two-dimensional electron gas in pseudomorphically strained InAs high-electron-mobility transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef09 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF09 ◽

Cited By ~ 3

Author(s):

Yui Nishio ◽

Takahiro Tange ◽

Naomi Hirayama ◽

Tsutomu Iida ◽

Yoshifumi Takanashi

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas

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Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions

Technical Physics Letters ◽

10.1134/s1063785014060091 ◽

2014 ◽

Vol 40 (6) ◽

pp. 488-490 ◽

Cited By ~ 5

Author(s):

I. O. Maiboroda ◽

A. A. Andreev ◽

P. A. Perminov ◽

Yu. V. Fedorov ◽

M. L. Zanaveskin

Keyword(s):

Electron Mobility ◽

Ohmic Contacts ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Mbe Growth ◽

High Electron Mobility ◽

2D Electron Gas ◽

Electron Mobility Transistors

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Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2518 ◽

2018 ◽

Vol 32 (2) ◽

pp. e2518 ◽

Cited By ~ 2

Author(s):

Abdelmalek Douara ◽

Bouaza Djellouli ◽

Hamza Abid ◽

Abdelaziz Rabehi ◽

Abderrezzaq Ziane ◽

...

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dimensional Electron Gas

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Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab0409 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SCCD10

Author(s):

Tomoki Hoshino ◽

Nobuya Mori

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Digital Alloy ◽

Dimensional Electron Gas

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

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