Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate

Wang Hua;  Ren Ming-Fang

doi:10.7498/aps.55.1512

Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate

Acta Physica Sinica ◽

10.7498/aps.55.1512 ◽

2006 ◽

Vol 55 (3) ◽

pp. 1512

Author(s):

Wang Hua ◽

Ren Ming-Fang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Memory Characteristics

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Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2019.2931826 ◽

2019 ◽

Vol 40 (9) ◽

pp. 1370-1373 ◽

Cited By ~ 5

Author(s):

Kuen-Yi Chen ◽

Yi-Shan Tsai ◽

Yung-Hsien Wu

Keyword(s):

Ionizing Radiation ◽

Field Effect ◽

Radiation Effect ◽

Field Effect Transistors ◽

Memory Characteristics

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Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles

2007 Digest of papers Microprocesses and Nanotechnology ◽

10.1109/imnc.2007.4456135 ◽

2007 ◽

Author(s):

Donghyuk Yeom ◽

Jeongmin Kang ◽

Changjoon Yoon ◽

Byoungjun Park ◽

Kihyun Keem ◽

...

Keyword(s):

Field Effect ◽

Au Nanoparticles ◽

Field Effect Transistors ◽

Floating Gate ◽

Zno Nanowire ◽

Memory Characteristics

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Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

AIP Advances ◽

10.1063/1.4935342 ◽

2015 ◽

Vol 5 (11) ◽

pp. 117106 ◽

Cited By ~ 3

Author(s):

Ryo Sugano ◽

Tomoya Tashiro ◽

Tomohito Sekine ◽

Kenjiro Fukuda ◽

Daisuke Kumaki ◽

...

Keyword(s):

Thermal Annealing ◽

Field Effect ◽

Field Effect Transistors ◽

Memory Characteristics

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Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2881965 ◽

2019 ◽

Vol 66 (1) ◽

pp. 413-419 ◽

Cited By ~ 9

Author(s):

Jinsun Cho ◽

Doohyeok Lim ◽

Sola Woo ◽

Kyungah Cho ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Random Access ◽

Random Access Memory ◽

Static Random Access Memory ◽

Access Memory ◽

Memory Characteristics

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The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2020.3012901 ◽

2020 ◽

Vol 8 ◽

pp. 846-849

Author(s):

Mengwei Si ◽

Zehao Lin ◽

Jinhyun Noh ◽

Junkang Li ◽

Wonil Chung ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

The Impact ◽

Memory Characteristics

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The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3108441 ◽

2021 ◽

pp. 1-6

Author(s):

Mengwei Si ◽

Peide D. Ye

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Critical Role ◽

Charge Balance ◽

Memory Characteristics

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Tuning non-volatile memory characteristics via molecular doping of polymer semiconductors based on ambipolar organic field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2018.03.043 ◽

2018 ◽

Vol 58 ◽

pp. 12-17 ◽

Cited By ~ 14

Author(s):

Minji Kang ◽

Dongyoon Khim ◽

Jihong Kim ◽

Hyeon Jun Lee ◽

Ji Young Jo ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Polymer Semiconductors ◽

Non Volatile Memory ◽

Molecular Doping ◽

Volatile Memory ◽

Memory Characteristics

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Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.27.333 ◽

2014 ◽

Vol 27 (3) ◽

pp. 333-337 ◽

Cited By ~ 2

Author(s):

Heisuke Sakai ◽

Hae-Jeong Cheong ◽

Takehito Kodzasa ◽

Hideo Tokuhisa ◽

Kazuhiko Tokoro ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Dielectric Behavior ◽

Organic Field Effect Transistors ◽

Memory Characteristics

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Cited By ~ 2

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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Construction of two-dimensional regression models of current-voltage characteristics of the output current of field-effect transistors using the information system PLExp

Izmeritel`naya Tekhnika ◽

10.32446/0368-1025it.2019-11-49-55 ◽

2019 ◽

pp. 49-55

Author(s):

N.Y. Baturina ◽

I.V. Kalienko

Keyword(s):

Information System ◽

Regression Models ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Output Current ◽

Current Voltage ◽

Current Voltage Characteristics

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