scholarly journals THE METHOD OF FOCUSED Ga+ ION BEAM IMPLANTATION TO FABRICATE SEMICONDUCTOR QUANTUM WELL WIRE

1996 ◽  
Vol 45 (3) ◽  
pp. 486
Author(s):  
WU ZHENG-YUN ◽  
HUANG QI-SHENG
Keyword(s):  
Quantum Well ◽  
Ion Beam ◽  
Quantum Well Wire ◽  
Ion Beam Implantation ◽  
Semiconductor Quantum Well

Exchange and correlation effects in a semiconductor quantum-well wire

1995 ◽  
Vol 17 (1) ◽  
pp. 85-90 ◽  
Author(s):  
Vera Beatriz Campos ◽  
Marcos H. Degani ◽  
Oscar Hipólito
Keyword(s):  
Quantum Well ◽  
Correlation Effects ◽  
Quantum Well Wire ◽  
Semiconductor Quantum Well ◽  
Exchange And Correlation

Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

1992 ◽  
Author(s):  
Howard E. Jackson ◽  
Ahn G. Choo ◽  
Bernard L. Weiss ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Ion Beam Implantation

Electron states in a semiconductor quantum well wire in presence of an external transversal electric field

2018 ◽  
Vol 93 (9) ◽  
pp. 095804 ◽  
Author(s):  
M Fernández-Lozada ◽  
Ri Betancourt-Riera ◽  
Re Betancourt-Riera ◽  
J M Nieto Jalil
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Electron States ◽  
Quantum Well Wire ◽  
Semiconductor Quantum Well ◽  
Transversal Electric

Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures

1988 ◽  
Vol 126 ◽  
Author(s):  
P. M. Petroff ◽  
Xueyu Qian ◽  
Per Olof Holtz ◽  
R. J. Simes ◽  
J. H. English ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Focused Ion Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Damage Distribution ◽  
Quantum Well Structures ◽  
Ion Beam Implantation ◽  
Dose Effects

ABSTRACTThe effects of Implantation Enhanced Interdiffusion (IEI) in GaAs-GaAlAs quantum well structures are investigated. A Focused Ion Beam (FIB) source is used to implant narrow lines (500Å wide) with Ga+ ions. IEI in these structures is characterized by low temperature Cathodoluminescence. The dose effects and annealing kinetics dependence on IEI are presented. An unusual damage distribution which produces IEI deep below the surface is observed for the case of FIB implant. The possible origins of this effect and the limits of IEI for processing quantum wires and boxes are discussed.

CARRIER MOBILITY IN A SEMICONDUCTOR QUANTUM WELL WIRE–EFFECTS OF EXTERNAL PERTURBATIONS

2006 ◽  
Vol 20 (01) ◽  
pp. 49-60
Author(s):  
B. REKHA ◽  
K. NAVANEETHAKRISHNAN
Keyword(s):  
Simple Model ◽  
Quantum Well ◽  
Carrier Mobility ◽  
Impurity Distribution ◽  
Wire Radius ◽  
External Perturbations ◽  
Quantum Well Wire ◽  
Maximum Contribution ◽  
Semiconductor Quantum Well ◽  
Temperature And Pressure

Carrier mobility in a narrow GaAs semiconductor quantum well wire embedded in the GaAlAs matrix is investigated using a simple model developed by Lee and Spector. Five different screening functions with three different impurity distributions are used in the calculations. The results show that (i) the choice of the screening function is important as the mobility values vary by two orders of magnitude, and (ii) the mobility values not only depend on the impurity distribution but also vary differently with the wire radius. While hydrostatic pressure reduces the mobility values, temperature increases the values. The polaronic effect decreases the mobility values irrespective of temperature and pressure, the maximum contribution being 9%.

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

2015 ◽  
Vol 24 (11) ◽  
pp. 117302 ◽  
Author(s):  
Re. Betancourt-Riera ◽  
Ri. Betancourt-Riera ◽  
J. M. Nieto Jalil ◽  
R. Riera
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Ring Geometry ◽  
Quantum Well Wire ◽  
Semiconductor Quantum Well ◽  
Cylindrical Ring
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