Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

1992 ◽  
Author(s):  
Howard E. Jackson ◽  
Ahn G. Choo ◽  
Bernard L. Weiss ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Ion Beam Implantation

Raman and Photoluminescence Characterization of FIB Patterned AIGaAs/GaAs Multiple Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Ahn Goo Choo ◽  
Xuelong. Cao ◽  
Spirit Tlali ◽  
Howard E. Jackson ◽  
Peter Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pl Spectra ◽  
Spatially Resolved

AbstractRaman and photoluminescence (PL) spectra have been used to characterize A10.3Ga0.7As/GaAs multiple quantum well (MQW) structures that have been patterned by focused ion beam (FIB) implantation followed by rapid thermal annealing (RTA). Microprobe Raman scattering is used to identify the appropriate RTA and FIB implantation conditions that provide for removal of implantation-induced damage and for compositional intermixing. FIB patterned wire-like structures are characterized by spatially resolved PL spectra.

Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing

1992 ◽  
Vol 281 ◽  
Author(s):  
Mukesh Kumar ◽  
Gregory N. De Brabander ◽  
Peter Chen ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Propagation Loss ◽  
Optical Channel ◽  
Multiple Quantum ◽  
Mixing Depth ◽  
Quantum Well Structures ◽  
Mode Field

ABSTRACTOptical channel waveguiding in AlGaAs multiple quantum well structures formed by compositional mixing implemented by focused ion beam (FIB) implantation is demonstrated. To achieve selective mixing, Si is FIB implanted with a dose of 5×1014 cm−2 followed by RTA at 950°C for 10 s. Raman microprobe spectra are used to characterize the lateral variation of mixing. Propagation loss in a channel waveguide is measured. Measurement of the waveguide mode field distribution allows for the determination of changes in refractive index due to mixing and an approximate mixing depth.

Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures

1993 ◽  
Vol 73 (12) ◽  
pp. 8489-8494 ◽  
Author(s):  
J. M. Zavada ◽  
F. Voillot ◽  
N. Lauret ◽  
R. G. Wilson ◽  
B. Theys
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Characterization of Proton-Irradiated InGaAs/GaAs Multiple Quantum Well Structures by Nonresonant Transient Four-Wave Mixing Technique

2000 ◽  
Vol 39 (Part 1, No. 10) ◽  
pp. 5781-5787 ◽  
Author(s):  
Kestutis Jarasiunas ◽  
Vygantas Mizeikis ◽  
Satoshi Iwamoto ◽  
Masao Nishioka ◽  
Takao Someya ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Four Wave Mixing ◽  
Multiple Quantum ◽  
Wave Mixing ◽  
Quantum Well Structures

Photoreflectance Characterization of GaNAs/GaAs Multiple Quantum Well Structures

2002 ◽  
Vol 389-393 ◽  
pp. 1497-1500
Author(s):  
Chien-Rong Lu ◽  
Jia Ren Lee ◽  
Yo-Yu Chen ◽  
Wei I Lee ◽  
Shih-Chang Lee
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

2008 ◽  
Vol 93 (11) ◽  
pp. 111906 ◽  
Author(s):  
L. Lahourcade ◽  
P. K. Kandaswamy ◽  
J. Renard ◽  
P. Ruterana ◽  
H. Machhadani ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optical Characterization ◽  
Multiple Quantum ◽  
Quantum Well Structures
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