Survey role of nano structure surface layer in Bacillus cereus strains resistant to antibiotics (Iran-Azzahra Hospital and Esfahan University)

2011 ◽  
Vol 5 (21) ◽  
Author(s):  
Shila Jalalpour
Author(s):  
В. Бутенко ◽  
V. Butenko

The assessment indices of surface layer effective state in machinery subjected to different ways of finishing are considered. The role of the dislocation restructurization process in the formation of operation characteristics of surface layer material quality and prediction of its working capacity is shown. A generalized quality index of multi-component functional layers formed on operation surfaces of machinery is described.


1985 ◽  
Vol 40 (3) ◽  
pp. 581-587 ◽  
Author(s):  
Hirofumi SHIBATA ◽  
Noriaki OHNISHI ◽  
Keiko TAKEDA ◽  
Isamu TANI
Keyword(s):  

2021 ◽  
pp. 2100122
Author(s):  
Xidong Suo ◽  
Jie Yang ◽  
Yanrong Zhang ◽  
Yuting Hao ◽  
Jiahui Yang ◽  
...  

2021 ◽  
pp. 103513
Author(s):  
Dmitrii A. Kremenchutskii ◽  
Gennady F. Batrakov ◽  
Illarion I. Dovhyi ◽  
Yury A. Sapozhnikov

2014 ◽  
Vol 80 (8) ◽  
pp. 2493-2503 ◽  
Author(s):  
Sara Esther Diomandé ◽  
Stéphanie Chamot ◽  
Vera Antolinos ◽  
Florian Vasai ◽  
Marie-Hélène Guinebretière ◽  
...  

ABSTRACTThe different strains ofBacillus cereuscan grow at temperatures covering a very diverse range. SomeB. cereusstrains can grow in chilled food and consequently cause food poisoning. We have identified a new sensor/regulator mechanism involved in low-temperatureB. cereusgrowth. Construction of a mutant of this two-component system enabled us to show that this system, called CasKR, is required for growth at the minimal temperature (Tmin). CasKR was also involved in optimal cold growth aboveTminand in cell survival belowTmin. Microscopic observation showed that CasKR plays a key role in cell shape during cold growth. Introducing thecasKRgenes in a ΔcasKRmutant restored its ability to grow atTmin. Although it was first identified in the ATCC 14579 model strain, this mechanism has been conserved in most strains of theB. cereusgroup. We show that the role of CasKR in cold growth is similar in otherB. cereus sensu latostrains with different growth temperature ranges, including psychrotolerant strains.


2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.


Sign in / Sign up

Export Citation Format

Share Document