scholarly journals Diluted Magnetic Semiconductor ZnO: Magnetic Ordering with Transition Metal and Rare Earth Ions

2020 ◽  
Author(s):  
Kuldeep Chand Verma
Keyword(s):  
Rare Earth ◽  
Transition Metal ◽  
Diluted Magnetic Semiconductor ◽  
Lattice Defect ◽  
Magnetic Ordering ◽  
Rare Earth Ions ◽  
Magnetic Contribution ◽  
First Principle Calculation ◽  
Synthesis Conditions ◽  
Diluted Magnetic

For advancement in future spintronics, the diluted magnetic semiconductors (DMSs) might be understood for their origin of ferromagnetic aptness. It not much clear to the ferromagnetism in DMS, that is intrinsic or via dopant clustering formation. For this, we have included a review study for the doping of transition metal and rare earth ions in ZnO. It is realized that the antiferromagnetic ordering is found in doped ZnO to achieve high-TC ferromagnetism. X-ray diffraction and Raman spectra techniques have been used to detect the wurtzite ZnO structure and lattice defects. Since ZnO has different types of morphology formation that is generally dependent on synthesis conditions and dopant level. The band gap energy of ZnO and lattice defect formation are shown by photoluminescence technique. The room temperature ferromagnetism is described with bound magnetic polaron (BMP) model in which oxygen vacancies play a major role. However, the temperature-dependent conditions are responsible for ferromagnetic ordering. The first principle calculation is used for dopant ions in ZnO for their replacement of Zn2+ atoms in the wurtzite structure as well as magnetic contribution.

Multiplet Hole Splittings of Core Electron Binding Energies in Transition Metal and Rare-Earth Ions

1973 ◽  
Author(s):  
P. S. Bagus ◽  
A. J. Freeman ◽  
F. Sasaki ◽  
Hugh C. Wolfe ◽  
C. D. Graham ◽  
...  
Keyword(s):  
Rare Earth ◽  
Transition Metal ◽  
Binding Energies ◽  
Rare Earth Ions ◽  
Core Electron ◽  
Electron Binding Energies ◽  
Electron Binding

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

2021 ◽  
Author(s):  
◽  
Simon Granville
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Rare Earth ◽  
Diluted Magnetic Semiconductor ◽  
Experimental Studies ◽  
Magnetic Semiconductor ◽  
Electronic And Magnetic Properties ◽  
Rare Earth Nitrides ◽  
Diluted Magnetic ◽  
Reaction With Water

<p>Materials that combine the useful properties of magnetic and semiconducting behaviours are sought for new and developing applications in electronics. In this thesis experimental studies of the properties of disordered thin films of several potentially magnetic semiconducting materials are presented. Previous research on the diluted magnetic semiconductor GaMnN is reviewed as an introduction to a study of GaMnN thin films grown with an ion-assisted deposition technique. Several complementary compositional and structural analysis techniques are used to determine that films can be grown with as much as 18 at. % Mn content and that contain no impurity phases, as are often detected in single crystalline GaMnN preparations with high Mn concentrations. The effects of varying Mn contents on the resistive, optical and magnetic properties of the thin films are investigated. The structural, electronic and magnetic properties of thin films of the potential impurity phase MnN have also been investigated and compared with band structure calculations. Recent predictions that the rare earth nitrides may have extremely useful electronic properties have been almost untested in the literature. A procedure for growing rare earth nitride thin films and capping them to protect from reaction with water vapour allows their resistivity, structural and magnetic properties to be established. The results on GdN, SmN, ErN and DyN support the recent predictions, and a more thorough study on GdN reveals that this material is a ferromagnetic semiconductor below 69 K.</p>

Magnetic and Transport Properties of Ga1-xMnxAs, a New III-V Diluted Magnetic Semiconductor

1997 ◽  
Vol 475 ◽  
Author(s):  
A. Van Esch ◽  
L. Van Bocksta ◽  
J. De Boeck ◽  
G. Verbanck ◽  
A. Van Steenbergen ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Ordering ◽  
Strongly Correlated ◽  
Metal Insulator ◽  
Transport Behaviour ◽  
Diluted Magnetic ◽  
Mn Concentration ◽  
Mn Concentrations ◽  
Strong Antiferromagnetic Interaction

ABSTRACTGa1-xMnxAs is a new III-V diluted magnetic semiconductor that can be grown by MBE with Mn concentrations up to x ∼ 0.09. Below a critical temperature Tc, determined by the Mn concentration (about 50 K for x = 0.05) the material becomes ferromagnetic. This is attributed to the magnetic long-range order of Mn-hole complexes, the latter being the result of the strong antiferromagnetic interaction between the holes and Mn 3d spins. Transport and magnetic properties of the Ga1-xMnxAs system are strongly correlated. Above Tc, all samples show transport behaviour characteristic for materials near the metal insulator transition. Below Tc, resistivity decreases as the magnetic ordering sets in. When the magnetisation has reached its saturation value (below ∼ 20 K), variable range hopping is the main transport mechanism. Also, a negative magnetoresistance is observed below Tc.

scholarly journals A First Principle Study of the Electronic Structures of Transition Metal Doped GaN for Diluted Magnetic Semiconductor Applications

2017 ◽  
Vol 170 ◽  
pp. 124-130 ◽  
Author(s):  
Romanudhin ◽  
Wahyu Aji Eko Prabowo ◽  
Fadjar Fathurrahman ◽  
Asih Melati ◽  
Hermawan Kresno Dipojono
Keyword(s):  
Transition Metal ◽  
Electronic Structures ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
First Principle ◽  
Diluted Magnetic ◽  
Metal Doped

Controlling Selective Doping and Energy Transfer between Transition Metal and Rare Earth Ions in Nanostructured Glassy Solids

2018 ◽  
Vol 6 (13) ◽  
pp. 1701407 ◽  
Author(s):  
Zhigang Gao ◽  
Shu Guo ◽  
Xiaosong Lu ◽  
Jiri Orava ◽  
Tomas Wagner ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Rare Earth ◽  
Transition Metal ◽  
Rare Earth Ions ◽  
Selective Doping
Sign in / Sign up

Export Citation Format

Share Document