Light emission properties of nanoparticles doped with transition metal and rare earth ions

2006 ◽  
Author(s):  
Marek Godlewski ◽  
Sergey Yatsunneko ◽  
Michal M. Godlewski
Keyword(s):  
Rare Earth ◽  
Transition Metal ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Emission Properties

Multiplet Hole Splittings of Core Electron Binding Energies in Transition Metal and Rare-Earth Ions

1973 ◽  
Author(s):  
P. S. Bagus ◽  
A. J. Freeman ◽  
F. Sasaki ◽  
Hugh C. Wolfe ◽  
C. D. Graham ◽  
...  
Keyword(s):  
Rare Earth ◽  
Transition Metal ◽  
Binding Energies ◽  
Rare Earth Ions ◽  
Core Electron ◽  
Electron Binding Energies ◽  
Electron Binding

ChemInform Abstract: Novel Rare Earth Ions-Doped Oxyfluoride Nanocomposite with Efficient Upconversion White-Light Emission.

ChemInform ◽  
2009 ◽  
Vol 40 (5) ◽  
Author(s):  
Daqin Chen ◽  
Yuansheng Wang ◽  
Yunlong Yu ◽  
Ping Huang ◽  
Fangyi Weng
Keyword(s):  
Rare Earth ◽  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
Rare Earth Ions

ENHANCING EMISSION PROPERTIES OF RARE EARTH IONS IN CHALCOGENIDE GLASS VIA MINUTE COMPOSITIONAL ADJUSTMENTS

2010 ◽  
Vol 19 (04) ◽  
pp. 663-671 ◽  
Author(s):  
YONG GYU CHOI
Keyword(s):  
Rare Earth ◽  
Chalcogenide Glass ◽  
Alkali Halides ◽  
Rare Earth Ions ◽  
Emission Properties ◽  
Group Iii ◽  
Thermal Stability Of ◽  
Nonradiative Processes ◽  
Sulphide Glass

The significant role of the chemical environments of rare earths ions in controlling their radiative and nonradiative processes are exemplified in this study: The emission properties of rare earth ions ( Dy3+ or Tm3+ ) embedded in the strong covalent chalcogenide glass ( Ge and/or As containing sulphide glass) are dramatically enhanced upon the addition of very small amount of the Group III elements ( Ga or In ) and alkali halides ( CsBr or RbBr ). These compositional adjustments alter only the local structural environments of rare earth ions, while thermal stability of the modified glass is kept unaltered.

Rare-earth doped Si nanostructures for Microphotonics

2004 ◽  
Vol 817 ◽  
Author(s):  
D. Pacifici ◽  
G. Franzò ◽  
F. Iacona ◽  
A. Irrera ◽  
S. Boninelli ◽  
...  
Keyword(s):  
Rare Earth ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Energy Level Scheme ◽  
Electroluminescent Devices ◽  
A Value ◽  
Si Nanocrystals ◽  
Emission Yield ◽  
Si Nanostructures ◽  
Rare Earth Doped

AbstractIn the present paper, we will review our work on rare-earth doped Si nanoclusters. The samples have been obtained by implanting the rare-earth (e.g. Er) in a film containing preformed Si nanocrystals. After the implant, samples have been treated at 900°C for 1h. This annealing temperature is not enough to re-crystallize all of the amorphized Si clusters. However, even if the Si nanoclusters are in the amorphous phase, they can still efficiently transfer the energy to nearby rare-earth ions. We developed a model for the Si nanoclusters-Er system, based on an energy level scheme taking into account the coupling between each Si nanocluster and the neighboring Er ions. By fitting the data, we were able to determine a value of 3×10−15 cm3 s−1 for the Si nanocluster-Er coupling coefficient. Moreover, a strong cooperative up-conversion mechanism between two excited Er ions and characterized by a coefficient of 7×10−17 cm3 s−1, is shown to be active in the system, demonstrating that more than one Er ion can be excited by the same nanocluster. We show that the overall light emission yield of the Er related luminescence can be enhanced by using higher concentrations of very small nanoaggregates. Eventually, electroluminescent devices based on rare-earth doped Si nanoclusters will be demonstrated.

Controlling Selective Doping and Energy Transfer between Transition Metal and Rare Earth Ions in Nanostructured Glassy Solids

2018 ◽  
Vol 6 (13) ◽  
pp. 1701407 ◽  
Author(s):  
Zhigang Gao ◽  
Shu Guo ◽  
Xiaosong Lu ◽  
Jiri Orava ◽  
Tomas Wagner ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Rare Earth ◽  
Transition Metal ◽  
Rare Earth Ions ◽  
Selective Doping
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