scholarly journals Utilization of Digital Twins and Other Numerical Relatives for Efficient Monte Carlo Simulation in Structural Analysis

2019 ◽  
Author(s):  
Bernt Johan Leira ◽  
Arifian Agusta ◽  
Sebastian Thöns
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Structural Analysis ◽  
Digital Twins

Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation

2005 ◽  
Vol 44 (6A) ◽  
pp. 3808-3812 ◽  
Author(s):  
Norikazu Tabuchi ◽  
Toshio Kawahara ◽  
Takashi Arai ◽  
Jun Morimoto ◽  
Hideki Matsumura
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Structural Analysis ◽  
Reverse Monte Carlo ◽  
Reverse Monte Carlo Simulation ◽  
Si Films

Application of Monte Carlo Simulation to a Structural Analysis for Two-Layered/Substrate System

2000 ◽  
Vol 39 (Part 1, No. 2A) ◽  
pp. 645-650 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami ◽  
Yasuhiro Yokota
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Structural Analysis ◽  
Layered Substrate

Application of Monte Carlo Simulation to Structural Analysis by Soft X-Ray Emission Spectroscopy for a Silicide/Si-Bulk System

1999 ◽  
Vol 38 (Part 1, No. 11) ◽  
pp. 6544-6548 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Structural Analysis ◽  
Emission Spectroscopy ◽  
X Ray ◽  
Bulk System

Structural analysis of erbium sheet‐doped GaAs grown by molecular‐beam epitaxy, with ion channeling followed by Monte Carlo simulation

1995 ◽  
Vol 77 (7) ◽  
pp. 3095-3103 ◽  
Author(s):  
Jyoji Nakata ◽  
Nicolas Jourdan ◽  
Hiroshi Yamaguchi ◽  
Kenichiro Takahei ◽  
Yasuich Yamamoto ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Structural Analysis ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Channeling

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

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