Structural analysis of erbium sheet‐doped GaAs grown by molecular‐beam epitaxy, with ion channeling followed by Monte Carlo simulation

1995 ◽  
Vol 77 (7) ◽  
pp. 3095-3103 ◽  
Author(s):  
Jyoji Nakata ◽  
Nicolas Jourdan ◽  
Hiroshi Yamaguchi ◽  
Kenichiro Takahei ◽  
Yasuich Yamamoto ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Structural Analysis ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Channeling

Characterization by ion-channeling of ZnSe grown by photo-assisted molecular beam epitaxy

1993 ◽  
Vol 132 (3-4) ◽  
pp. 575-577
Author(s):  
T. Haga ◽  
M. Ohishi ◽  
K. Imai ◽  
K. Kumazaki ◽  
K. Ohmori ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Channeling

Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation

2005 ◽  
Vol 44 (6A) ◽  
pp. 3808-3812 ◽  
Author(s):  
Norikazu Tabuchi ◽  
Toshio Kawahara ◽  
Takashi Arai ◽  
Jun Morimoto ◽  
Hideki Matsumura
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Structural Analysis ◽  
Reverse Monte Carlo ◽  
Reverse Monte Carlo Simulation ◽  
Si Films
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