scholarly journals Convection Currents in Nanofluids under Small Temperature Gradient

2020 ◽  
Author(s):  
Jyoti Sharma ◽  
Urvashi Gupta
Keyword(s):  
Temperature Gradient ◽  
Small Temperature ◽  
Small Temperature Gradient

Engineering Desired Grain Orientation and Boundaries Separating Adjacent Grains in Polycrystalline Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
I. A. Rauf ◽  
M. Sayer
Keyword(s):  
Temperature Gradient ◽  
Grain Boundaries ◽  
Grain Orientation ◽  
Coincidence Site Lattice ◽  
Low Energy ◽  
Zone Refining ◽  
Small Temperature ◽  
Polycrystalline Thin Films ◽  
Small Temperature Gradient ◽  
A Chain

AbstractA simple process, involving a controlled temperature gradient on the surface of the substrate during the deposition of a thin film is described. This technique is similar to zone-refining but produces chains of impurity free grains. Simultaneously, dopants and other defects are confined to the grain boundaries separating two such chains. For a small temperature gradient only preferred orientation is obtained within a chain. For medium values of temperature gradient the grain boundaries within a chain are engineered to be either on a low energy coincidence site lattice (CSL) or a twin depending on the magnitude of gradient. For high magnitudes of temperature gradient, the chain is predicted to be a single crystal strip.

EXPERIMENTAL INVESTIGATION ABOUT EDISON TYPE THERMOMAGNETIC MOTORS BEHAVIOR OPERATING WITH A SMALL TEMPERATURE GRADIENT

2021 ◽  
Author(s):  
Carlos Vinicius Xavier Bessa ◽  
João de Sá Brasil Lima ◽  
Bruno Chieregatti ◽  
Ricardo Galdino ◽  
Lucas Diego Rodrigues Ferreira
Keyword(s):  
Experimental Investigation ◽  
Temperature Gradient ◽  
Small Temperature ◽  
Small Temperature Gradient

Energy Harvesting under Large Temperature Gradient – Comparison of Silicides, Half-Heusler Alloys and Ceramics

2015 ◽  
Vol 2 (1-2) ◽  
Author(s):  
Wilfried Wunderlich
Keyword(s):  
Energy Harvesting ◽  
Temperature Gradient ◽  
Seebeck Coefficient ◽  
Heusler Alloys ◽  
Large Temperature ◽  
Analysis Method ◽  
Small Temperature ◽  
Large Temperature Gradient ◽  
Small Temperature Gradient

AbstractThis paper reports about a new four-step analysis method for thermoelectric (TE) materials. While the Seebeck coefficient is usually measured under small temperature gradient, we report here the measurement of TE materials under large temperature gradient. The examined materials were Ag- and Bi-doped Mg

Transient Processing of Titanium Silicides in a Non-Isothermal Reactor

1984 ◽  
Vol 35 ◽  
Author(s):  
C.S. Wei ◽  
J. Van Der Spiegel ◽  
J. Santiago ◽  
L.E. Seiberling
Keyword(s):  
Temperature Gradient ◽  
Formation Process ◽  
Driving Forces ◽  
Intermediate Phase ◽  
The Other ◽  
Silicide Formation ◽  
High Quality ◽  
Small Temperature ◽  
Small Temperature Gradient ◽  
Negligible Influence

ABSTRACTTransient processing of titanium silicides on single-crystal Si in a non-isothermal reactor provides high quality films. Heat from quartz-hal?gen tungsten lamps and a small temperature gradient act as driving forces for the reaction. The temperature gradient, small compared to the concentration gradient, shows negligible influence on the formation process. The influence of sample reflectivity on the other hand is appreciable. From Xe+ marker experiments, Si atoms are found to be the moving species either up or down the temperature gradient. Small amount of TiSi as an intermediate phase is found to be coexistent with TiSi2. The silicide formation of the implanted wafers is somewhat slower than that of the unimplanted wafers.

Vertical Bridgman Growth of GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
R. E. Kremer ◽  
D. Francomano ◽  
G. H. Beckhart ◽  
K. M. Burke ◽  
T. Miller
Keyword(s):  
Temperature Gradient ◽  
Bridgman Method ◽  
Bridgman Growth ◽  
Small Temperature ◽  
Vertical Bridgman Method ◽  
Dislocation Densities ◽  
Vertical Bridgman ◽  
Small Temperature Gradient ◽  
Silicon Doped ◽  
Highly Uniform

ABSTRACTWe have developed a process to grow both undoped, semi-insulating (SI) and silicon-doped, semiconducting (SC) GaAs using a vertical Bridgman method. The technique combines advantages of both liquid encapsulated Czochralski (LEC) and horizontal Bridgman (HB) processes. SI ingots, grown in pBN boats, and SC ingots, grown in quartz boats, are passed through a relatively shallow temperature gradient. Properties of the resulting material are highly uniform across the surface of a wafer. Because of the small temperature gradient, dislocation densities are very low (typically under 4000/cm∩2).

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