Vertical Bridgman Growth of GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
R. E. Kremer ◽  
D. Francomano ◽  
G. H. Beckhart ◽  
K. M. Burke ◽  
T. Miller
Keyword(s):  
Temperature Gradient ◽  
Bridgman Method ◽  
Bridgman Growth ◽  
Small Temperature ◽  
Vertical Bridgman Method ◽  
Dislocation Densities ◽  
Vertical Bridgman ◽  
Small Temperature Gradient ◽  
Silicon Doped ◽  
Highly Uniform

ABSTRACTWe have developed a process to grow both undoped, semi-insulating (SI) and silicon-doped, semiconducting (SC) GaAs using a vertical Bridgman method. The technique combines advantages of both liquid encapsulated Czochralski (LEC) and horizontal Bridgman (HB) processes. SI ingots, grown in pBN boats, and SC ingots, grown in quartz boats, are passed through a relatively shallow temperature gradient. Properties of the resulting material are highly uniform across the surface of a wafer. Because of the small temperature gradient, dislocation densities are very low (typically under 4000/cm∩2).

Growth and Characterization of CDTE and CDTE Alloys

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Mcdevitt ◽  
D.R. John ◽  
J.L. Sepich ◽  
K.A. Bowers ◽  
J.F. Schetzina ◽  
...  
Keyword(s):  
Single Crystal ◽  
Distribution Coefficients ◽  
Bridgman Method ◽  
Bridgman Technique ◽  
Vertical Bridgman Method ◽  
Dislocation Densities ◽  
Crystal Properties ◽  
Vertical Bridgman ◽  
The Difference

ABSTRACTMethods used to grow bulk, CdTe crystals, effects of alloying on their perfection and typical single crystal properties are reviewed in this paper. Crystals grown by a modified horizontal Bridgman technique have lower dislocation densities than those grown by a modified vertical Bridgman method. Dislocation densities of the order of 1×103/cm2 have been observed in CdTeSe crystals grown by the former technique. Due to the difference in the distribution coefficients of Zn and Se in CdTe, CdTeSe ingots are chemically more uniform than CdZnTe ingots. Purity studies of starting materials indicate that Se substitutions may introduce more impurities than Zn additions.

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

2014 ◽  
Author(s):  
Chang-Bao HUANG ◽  
You-Bao NI ◽  
Hai-Xin WU ◽  
Zhen-You WANG ◽  
Xu-Dong CHENG ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

The Influence of Gravity on Eutectic PbSn Alloy Grown by the Vertical Bridgman Method

2016 ◽  
Vol 869 ◽  
pp. 637-642
Author(s):  
Rafael Cardoso Toledo ◽  
Chen Y. An ◽  
Irajá Newton Bandeira ◽  
Filipe Estevão de Freitas
Keyword(s):  
Eutectic Alloy ◽  
Thermal Gradient ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman ◽  
Composition Profiles ◽  
Buoyancy Driven Convection ◽  
Gravity Acceleration

Composition profiles of eutectic alloy Pb25.9Sn74.1 atomic % grown by the normal and inverted Bridgman methods are presented and the study of the solute alloy redistribution is made. The inverted vertical Bridgman method, where the solidification occurs from the top to the bottom of the melt under a destabilizing thermal gradient, allows the growth of crystals with buoyancy-driven convection different from that with the usual vertical Bridgman configuration. The scope of this work is to study the influence of the gravity acceleration in the convection process.

Crystal growth and characterization of Cd0.8Mn0.2Te using Vertical Bridgman method

2008 ◽  
Vol 43 (5) ◽  
pp. 1239-1245 ◽  
Author(s):  
Jijun Zhang ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Dongmei Zeng ◽  
Shuying Ma ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

Synthesis and Bridgman Growth of Ga2S3 Crystals

2016 ◽  
Vol 683 ◽  
pp. 71-76 ◽  
Author(s):  
Konstantin Kokh ◽  
Ivan N. Lapin ◽  
Valery Svetlichnyi ◽  
Perizat Galiyeva ◽  
Askar Bakhadur ◽  
...  
Keyword(s):  
Phase Transition ◽  
Solution Method ◽  
Damage Threshold ◽  
Chemical Transport ◽  
Bridgman Method ◽  
Monoclinic Structure ◽  
High Quality ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman ◽  
Transport Method

In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 μm and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga2S3 crystal among the most prospective crystals for nonlinear applications.

Spectroscopic properties of OH− doped and Bi-rich Bi4Ge3O12 crystals by vertical Bridgman method

2011 ◽  
Vol 131 (8) ◽  
pp. 1608-1611 ◽  
Author(s):  
Pingsheng Yu ◽  
Liangbi Su ◽  
Hengyu Zhao ◽  
Xin Guo ◽  
Hongjun Li ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman
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