scholarly journals Multi-Physics Simulation Platform and Multi-Layer Metal Technology for CMOS-MEMS Accelerometer with Gold Proof Mass

2019 ◽  
Author(s):  
Katsuyuki Machida ◽  
Toshifumi Konishi ◽  
Daisuke Yamane ◽  
Hiroshi Toshiyoshi ◽  
Hiroyuki Ito
Keyword(s):  
Proof Mass ◽  
Simulation Platform ◽  
Mems Accelerometer ◽  
Physics Simulation ◽  
Cmos Mems

Novel Gain-Controlled Sensor Circuits Designed by Multi-physics Simulation for CMOS-MEMS Accelerometer

2015 ◽  
Author(s):  
T. Konishi ◽  
D. Yamane ◽  
M. Takayasu ◽  
S. Dosho ◽  
N. Ishihara ◽  
...  
Keyword(s):  
Mems Accelerometer ◽  
Physics Simulation ◽  
Cmos Mems

A CMOS-MEMS Accelerometer with U-channel Suspended Gate SOI FET

2021 ◽  
pp. 1-1
Author(s):  
Pramod Martha ◽  
Naveen Kadayinti ◽  
V. Seena
Keyword(s):  
Mems Accelerometer ◽  
Cmos Mems

scholarly journals A Low-g MEMS Accelerometer with High Sensitivity, Low Nonlinearity and Large Dynamic Range Based on Mode-Localization of 3-DoF Weakly Coupled Resonators

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 310
Author(s):  
Muhammad Mubasher Saleem ◽  
Shayaan Saghir ◽  
Syed Ali Raza Bukhari ◽  
Amir Hamza ◽  
Rana Iqtidar Shakoor ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Dynamic Range ◽  
Proof Mass ◽  
Amplitude Ratio ◽  
Silicon On Insulator ◽  
Coupled Resonators ◽  
Mode Localization ◽  
Mems Accelerometer ◽  
Weakly Coupled ◽  
Input Acceleration

This paper presents a new design of microelectromechanical systems (MEMS) based low-g accelerometer utilizing mode-localization effect in the three degree-of-freedom (3-DoF) weakly coupled MEMS resonators. Two sets of the 3-DoF mechanically coupled resonators are used on either side of the single proof mass and difference in the amplitude ratio of two resonator sets is considered as an output metric for the input acceleration measurement. The proof mass is electrostatically coupled to the perturbation resonators and for the sensitivity and input dynamic range tuning of MEMS accelerometer, electrostatic electrodes are used with each resonator in two sets of 3-DoF coupled resonators. The MEMS accelerometer is designed considering the foundry process constraints of silicon-on-insulator multi-user MEMS processes (SOIMUMPs). The performance of the MEMS accelerometer is analyzed through finite-element-method (FEM) based simulations. The sensitivity of the MEMS accelerometer in terms of amplitude ratio difference is obtained as 10.61/g for an input acceleration range of ±2 g with thermomechanical noise based resolution of 0.22 and nonlinearity less than 0.5%.

A Novel CMOS MEMS Accelerometer with Four Sensing Finger Arrays

2006 ◽  
Author(s):  
Chih-Mimg Sun ◽  
Chuan-Wei Wang ◽  
Dong Hang Liu ◽  
M.S.-C. Lu ◽  
Weileun Fang ◽  
...  
Keyword(s):  
Mems Accelerometer ◽  
Cmos Mems

scholarly journals A Robust Fully-Integrated Digital-Output Inductive CMOS-MEMS Accelerometer with Improved Inductor Quality Factor

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 792
Author(s):  
Chiu ◽  
Liu ◽  
Hong
Keyword(s):  
Quality Factor ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Devices ◽  
Digital Output ◽  
Detection Scheme ◽  
Mems Accelerometer ◽  
Analog To Digital Conversion ◽  
Cmos Mems ◽  
In Series

This paper presents the design, fabrication, and characterization of an inductive complementary metal oxide semiconductor micro-electromechanical systems (CMOS-MEMS) accelerometer with on-chip digital output based on LC oscillators. While most MEMS accelerometers employ capacitive detection schemes, the proposed inductive detection scheme is less susceptible to the stress-induced structural curling and deformation that are commonly seen in CMOS-MEMS devices. Oscillator-based frequency readout does not need analog to digital conversion and thus can simplify the overall system design. In this paper, a high-Q CMOS inductor was connected in series with the low-Q MEMS sensing inductor to improve its quality factor. Measurement results showed the proposed device had an offset frequency of 85.5 MHz, sensitivity of 41.6 kHz/g, noise floor of 8.2 mg/Hz, bias instability of 0.94 kHz (11 ppm) at an average time of 2.16 s, and nonlinearity of 1.5% full-scale.

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