scholarly journals Intersubband Transitions in the Quantum Dot Layers for Quantum Confined Photodetector

10.5772/8860 ◽  
2010 ◽  
Author(s):  
Shiang-Feng Tang ◽  
Tzu-Chiang Chen ◽  
Shih-Yen Lin ◽  
Hsing-Yuan Tu
Keyword(s):  
Quantum Dot ◽  
Intersubband Transitions ◽  
Quantum Confined

Quantum-confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

2007 ◽  
Vol 43 (12) ◽  
pp. 686 ◽  
Author(s):  
D.B. Malins ◽  
A. Gomez-Iglesias ◽  
P. Spencer ◽  
E. Clarke ◽  
R. Murray ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Inas Quantum Dot

scholarly journals Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

2005 ◽  
Vol 86 (21) ◽  
pp. 213103 ◽  
Author(s):  
James W. Robinson ◽  
James H. Rice ◽  
Kwan H. Lee ◽  
Jong H. Na ◽  
Robert A. Taylor ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Lateral Electric Field ◽  
Quantum Confined

Theory of quantum dot luminescence from acoustically excited intersubband transitions

2006 ◽  
Vol 243 (10) ◽  
pp. 2257-2260 ◽  
Author(s):  
F. Milde ◽  
K. J. Ahn ◽  
A. Knorr
Keyword(s):  
Quantum Dot ◽  
Intersubband Transitions

Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure

2003 ◽  
Vol 94 (8) ◽  
pp. 4995 ◽  
Author(s):  
L. Malikova ◽  
Fred H. Pollak ◽  
R. A. Masut ◽  
P. Desjardins ◽  
Lev G. Mourokh
Keyword(s):  
Quantum Dot ◽  
Intersubband Transitions ◽  
Temperature Dependent ◽  
Self Assembled

Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

2007 ◽  
Vol 1055 ◽  
Author(s):  
Brandon Scott Passmore ◽  
Jiang Wu ◽  
Eric A. Decuir ◽  
Omar Manasreh ◽  
Peter M. Lytvyn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Peak Position ◽  
Dual Band ◽  
Intersubband Transitions ◽  
Temperature Dependent ◽  
Mid Infrared ◽  
Poisson Equations ◽  
Infrared Spectral ◽  
Consistent Solution

ABSTRACTThe interband and intersubband transitions in self-assembled InAs and In0.3Ga0.7As quantum dots grown by molecular beam epitaxy have been investigated for their use in visible, near-, and mid-infrared detection applications. Devices based on InAs quantum dots embedded in an InxGa1−xAs (0 to 0.3) graded well and In0.3Ga0.7As quantum dots were fabricated in order to measure the temperature dependent (77 – 300 K) photoresponse. The dark current was measured in the temperature range of 77 to 300 K for the devices. Room temperature photoresponse ranging between 0.6 to 1.3 μm was observed for the InAs and In0.3Ga0.7As quantum dot photodetectors. Furthermore, a dual band photoresponse in the visible, near-, and mid-infrared spectral regions for both devices was observed at 77 K. Using a self-consistent solution of Schrödinger-Poisson equations, the peak position energies of the interband and intersubband transitions in the two multi-color quantum dot infrared photodetector structures was calculated.

Quantum-Confined Stark Effects in a Single GaN Quantum Dot

2008 ◽  
Vol 25 (7) ◽  
pp. 2628-2630 ◽  
Author(s):  
Liu Yong-Hui ◽  
Wang Xue-Feng ◽  
Li Shu-Shen
Keyword(s):  
Quantum Dot ◽  
Stark Effects ◽  
Quantum Confined
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