Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure

2003 ◽  
Vol 94 (8) ◽  
pp. 4995 ◽  
Author(s):  
L. Malikova ◽  
Fred H. Pollak ◽  
R. A. Masut ◽  
P. Desjardins ◽  
Lev G. Mourokh
Keyword(s):  
Quantum Dot ◽  
Intersubband Transitions ◽  
Temperature Dependent ◽  
Self Assembled

Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

2007 ◽  
Vol 1055 ◽  
Author(s):  
Brandon Scott Passmore ◽  
Jiang Wu ◽  
Eric A. Decuir ◽  
Omar Manasreh ◽  
Peter M. Lytvyn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Peak Position ◽  
Dual Band ◽  
Intersubband Transitions ◽  
Temperature Dependent ◽  
Mid Infrared ◽  
Poisson Equations ◽  
Infrared Spectral ◽  
Consistent Solution

ABSTRACTThe interband and intersubband transitions in self-assembled InAs and In0.3Ga0.7As quantum dots grown by molecular beam epitaxy have been investigated for their use in visible, near-, and mid-infrared detection applications. Devices based on InAs quantum dots embedded in an InxGa1−xAs (0 to 0.3) graded well and In0.3Ga0.7As quantum dots were fabricated in order to measure the temperature dependent (77 – 300 K) photoresponse. The dark current was measured in the temperature range of 77 to 300 K for the devices. Room temperature photoresponse ranging between 0.6 to 1.3 μm was observed for the InAs and In0.3Ga0.7As quantum dot photodetectors. Furthermore, a dual band photoresponse in the visible, near-, and mid-infrared spectral regions for both devices was observed at 77 K. Using a self-consistent solution of Schrödinger-Poisson equations, the peak position energies of the interband and intersubband transitions in the two multi-color quantum dot infrared photodetector structures was calculated.

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