scholarly journals Advanced SiC/Oxide Interface Passivation

10.5772/67867 ◽  
2017 ◽  
Author(s):  
Yogesh Kumar Sharma
Keyword(s):  
Oxide Interface ◽  
Interface Passivation

Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation

2017 ◽  
Vol 897 ◽  
pp. 163-166 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
J. Houston Dycus ◽  
Wei Zong Xu ◽  
James M. Lebeau ◽  
Brett A. Hull ◽  
...  
Keyword(s):  
Field Effect ◽  
Secondary Ion Mass Spectrometry ◽  
Inversion Layer ◽  
Control Sample ◽  
Interface Layer ◽  
Interface Structure ◽  
Dark Field ◽  
Oxide Interface ◽  
Scanning Transmission ◽  
Interface Passivation

A Barium-rich interface process provides SiO2/SiC interface conditions suitable for obtaining SiC field-effect (FE) channel mobility twice that of a nitric oxide (NO) passivation anneal. The temperature dependence of the field-effect mobility indicates clear differences in their interface properties. Secondary-ion mass spectrometry (SIMS) indicates that Ba remains predominantly at the SiO2/SiC interface, with only ~1×1017 cm-3 Ba in the oxide.The interface structure and chemistry of the Ba-modified MOS devices was investigated using scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDS). High-angle annular dark-field (HAADF) imaging reveals that the Ba interface layer results in an oxide-interface region not present in the NO annealed control sample. EDS mapping shows that this is a Ba-rich oxide interface layer. Using a new technique “revolving STEM” (RevSTEM) to correct drift and image distortion, SiC strain maps were generated. With an NO anneal there is tensile strain within SiC at the SiO2/SiC interface, along the C-axis direction. With the Ba interlayer, however, there is no observable strain relative to the bulk SiC. This interface strain may correlate with the inversion layer mobility, with an unstrained interface preferred.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

HREM observation of NiO growth on submicron spheres of pure nickel

1989 ◽  
Vol 47 ◽  
pp. 548-549
Author(s):  
C.M. Teng ◽  
T.F. Kelly ◽  
J.P. Zhang ◽  
H.M. Lin ◽  
Y.W. Kim
Keyword(s):  
Nickel Oxide ◽  
Grain Boundaries ◽  
Pure Nickel ◽  
Submicron Particles ◽  
Crystal Formation ◽  
Nickel Wire ◽  
Liquid Droplets ◽  
Oxide Interface ◽  
Nickel Chromium ◽  
Chromium Alloys

Spherical submicron particles of materials produced by electrohydrodynamic (EHD) atomization have been used to study a variety of materials processes including nucleation of alternative crystallization phases in iron-nickel and nickel-chromium alloys, amorphous solidification in submicron droplets of pure metals, and quasi-crystal formation in nickel-chromium alloys. Some experiments on pure nickel, nickel oxide single crystals, the nickel/nickel(II) oxide interface, and grain boundaries in nickel monoxide have been performed by STEM. For these latter studies, HREM is the most direct approach to obtain particle crystal structures at the atomic level. Grain boundaries in nickel oxide have also been investigated by HREM. In this paper, we present preliminary results of HREM observations of NiO growth on submicron spheres of pure nickel.Small particles of pure nickel were prepared by EHD atomization. For the study of pure nickel, 0.5 mm diameter pure nickel wire (99.9975%) is sprayed directly in the EHD process. The liquid droplets solidify in free-flight through a vacuum chamber operated at about 10-7 torr.

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

2D MoS 2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO 2 /HfO 2 Dielectrics and Oxide Interface Traps

2021 ◽  
pp. 2100074
Author(s):  
Livia Janice Widiapradja ◽  
Taewook Nam ◽  
Yeonsu Jeong ◽  
Hye‐Jin Jin ◽  
Yangjin Lee ◽  
...  
Keyword(s):  
Charge Injection ◽  
Interface Traps ◽  
Oxide Interface

Surface to bulk charge transfer at an alkali metal/metal oxide interface

2003 ◽  
Vol 547 (1-2) ◽  
pp. L859-L864 ◽  
Author(s):  
R Lindsay ◽  
E Michelangeli ◽  
B.G Daniels ◽  
M Polcik ◽  
A Verdini ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Alkali Metal ◽  
Metal Oxide ◽  
Oxide Interface ◽  
Metal Metal ◽  
Bulk Charge

scholarly journals Prototypical Organic–Oxide Interface: Intramolecular Resolution of Sexiphenyl on In2O3(111)

2018 ◽  
Vol 10 (16) ◽  
pp. 14175-14182 ◽  
Author(s):  
Margareta Wagner ◽  
Jakob Hofinger ◽  
Martin Setvín ◽  
Lynn A. Boatner ◽  
Michael Schmid ◽  
...  
Keyword(s):  
Oxide Interface

Polar Oxide Interface Stabilization by Formation of Metallic Nanocrystals

2003 ◽  
Vol 90 (21) ◽  
Author(s):  
Vlado K. Lazarov ◽  
Scott A. Chambers ◽  
Marija Gajdardziska-Josifovska
Keyword(s):  
Oxide Interface ◽  
Polar Oxide

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

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