scholarly journals Laser-Scribing Technology for Wafer-Scale Graphene Devices

10.5772/64228 ◽  
2016 ◽  
Author(s):  
He Tian ◽  
Mohammad Ali Mohammad ◽  
Wen-Tian Mi ◽  
Yi Yang ◽  
Tian-Ling Ren
Keyword(s):  
Wafer Scale ◽  
Laser Scribing ◽  
Graphene Devices

Graphene devices based on laser scribing technology

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FA01 ◽  
Author(s):  
Yan-Cong Qiao ◽  
Yu-Hong Wei ◽  
Yu Pang ◽  
Yu-Xing Li ◽  
Dan-Yang Wang ◽  
...  
Keyword(s):  
Laser Scribing ◽  
Graphene Devices

Epitaxial Graphenes on Silicon Carbide

MRS Bulletin ◽  
2010 ◽  
Vol 35 (4) ◽  
pp. 296-305 ◽  
Author(s):  
Phillip N. First ◽  
Walt A. de Heer ◽  
Thomas Seyller ◽  
Claire Berger ◽  
Joseph A. Stroscio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure ◽  
Weak Coupling ◽  
Materials Science ◽  
Epitaxial Graphene ◽  
Multilayer Graphene ◽  
Wafer Scale ◽  
Graphene Layers ◽  
Salient Features ◽  
Graphene Devices

AbstractThis article reviews the materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals and progress toward the deterministic manufacture of graphene devices. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) differs from growth on the C-terminated SiC(0001) surface, resulting in, respectively, strong and weak coupling to the substrate and to successive graphene layers. Monolayer epitaxial graphene on either surface displays the expected electronic structure and transport characteristics of graphene, but the non-graphitic stacking of multilayer graphene on SiC(0001) determines an electronic structure much different from that of graphitic multilayers on SiC(0001). This materials system is rich in subtleties, and graphene grown on the two polar faces of SiC differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

scholarly journals Application of Molecular Vapour Deposited Al2O3 for Graphene-Based Biosensor Passivation and Improvements in Graphene Device Homogeneity

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2121
Author(s):  
Muhammad Munem Ali ◽  
Jacob John Mitchell ◽  
Gregory Burwell ◽  
Klaudia Rejnhard ◽  
Cerys Anne Jenkins ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Point Of Care ◽  
Device Performance ◽  
Graphene Surface ◽  
Wafer Scale ◽  
Passivation Film ◽  
Transfer Processes ◽  
Sensor Device ◽  
Graphene Devices ◽  
Deposition Technology

Graphene-based point-of-care (PoC) and chemical sensors can be fabricated using photolithographic processes at wafer-scale. However, these approaches are known to leave polymer residues on the graphene surface, which are difficult to remove completely. In addition, graphene growth and transfer processes can introduce defects into the graphene layer. Both defects and resist contamination can affect the homogeneity of graphene-based PoC sensors, leading to inconsistent device performance and unreliable sensing. Sensor reliability is also affected by the harsh chemical environments used for chemical functionalisation of graphene PoC sensors, which can degrade parts of the sensor device. Therefore, a reliable, wafer-scale method of passivation, which isolates the graphene from the rest of the device, protecting the less robust device features from any aggressive chemicals, must be devised. This work covers the application of molecular vapour deposition technology to create a dielectric passivation film that protects graphene-based biosensing devices from harsh chemicals. We utilise a previously reported “healing effect” of Al2O3 on graphene to reduce photoresist residue from the graphene surface and reduce the prevalence of graphene defects to improve graphene device homogeneity. The improvement in device consistency allows for more reliable, homogeneous graphene devices, that can be fabricated at wafer-scale for sensing and biosensing applications.

Wafer scale integration

1988 ◽  
Vol 135 (6) ◽  
pp. 281
Author(s):  
J.B. Butcher ◽  
K.K. Johnstone
Keyword(s):  
Wafer Scale ◽  
Wafer Scale Integration ◽  
Scale Integration

Investigation of Plasma Treatment Conditions for Wafer-Scale Room-Temperature Bonding Using Ultrathin Au Films in Ambient Air

2019 ◽  
Vol 139 (7) ◽  
pp. 217-218
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Room Temperature ◽  
Ambient Air ◽  
Wafer Scale ◽  
Treatment Conditions
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