scholarly journals Non-Destructive Surface Analysis by Low Energy Electron Loss Spectroscopy

10.5772/48090 ◽  
2012 ◽  
Author(s):  
Vitaliy Tinkov
Keyword(s):  
Surface Analysis ◽  
Low Energy ◽  
Energy Electron ◽  
Electron Loss ◽  
Low Energy Electron ◽  
Non Destructive

Low-energy electron-loss spectroscopy of GaSe and InSe

1986 ◽  
Vol 33 (12) ◽  
pp. 8164-8170 ◽  
Author(s):  
H. Araki ◽  
S. Nishikawa ◽  
T. Tanbo ◽  
C. Tatsuyama
Keyword(s):  
Low Energy ◽  
Energy Electron ◽  
Electron Loss ◽  
Low Energy Electron

Oxidation of metallic cadmium studied by low-energy-electron-loss spectroscopy

1981 ◽  
Vol 24 (2) ◽  
pp. 574-581 ◽  
Author(s):  
Atsuko Ebina ◽  
Kiyomitsu Asano ◽  
Tadashi Takahashi
Keyword(s):  
Low Energy ◽  
Energy Electron ◽  
Electron Loss ◽  
Metallic Cadmium ◽  
Low Energy Electron

Non-Destructive, Large-Scale Imaging of Anti-Phase Disorder in GaP Epilayers on Si(001) Using Low-Energy Electron Microscopy

2012 ◽  
Vol 45 (4) ◽  
pp. 231-239 ◽  
Author(s):  
B. Borkenhagen ◽  
H. Doscher ◽  
T. Hannappel ◽  
G. Lilienkamp ◽  
W. Daum
Keyword(s):  
Electron Microscopy ◽  
Large Scale ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron ◽  
Non Destructive

Low-energy electron-loss spectroscopy of a ZnSe(111) surface

1977 ◽  
Vol 16 (6) ◽  
pp. 2676-2683 ◽  
Author(s):  
Atsuko Ebina ◽  
Tadashi Takahashi
Keyword(s):  
Low Energy ◽  
Energy Electron ◽  
Electron Loss ◽  
Low Energy Electron

scholarly journals A Monochromatic, Aberration-Corrected, Dual-Beam Low Energy Electron Microscope for DNA Sequencing and Surface Analysis

2013 ◽  
Vol 19 (S2) ◽  
pp. 314-315
Author(s):  
M. Mankos ◽  
K. Shadman ◽  
H. Persson ◽  
A. N'Diaye ◽  
A. Schmid ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Dna Sequencing ◽  
Surface Analysis ◽  
Low Energy ◽  
Energy Electron ◽  
Dual Beam ◽  
Low Energy Electron ◽  
Aberration Corrected

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

scholarly journals Imaging Oxide-Covered Doped Silicon Structures Using Low-Energy Electron Microscopy

2007 ◽  
Vol 1026 ◽  
Author(s):  
Meredith Anderson ◽  
C.Y. Nakakura ◽  
K.F. Saiz ◽  
G.L. Kellogg
Keyword(s):  
Electron Microscopy ◽  
Low Energy ◽  
Energy Electron ◽  
Promising Technique ◽  
Microelectronic Devices ◽  
Thermal Oxide ◽  
Silicon Structures ◽  
Low Energy Electron ◽  
Mirror Mode ◽  
Non Destructive

AbstractLow energy electron microscopy (LEEM) operated at incident electron energies just above the “mirror” mode is used to image Si-based test devices. Significant p- vs. n- doping contrast is observed, even when the structures are covered with a ∼3.5 nm thermal oxide. The contrast arises from a difference in surface potential between the two regions and is related to both p-n work function differences and electron-beam-induced charging of the oxide. The results show that the LEEM is capable of characterizing pn junctions without complicated sample preparation and that it is a promising technique for rapid, non-destructive imaging of microelectronic devices.

Scanning low energy electron loss microscopy (SLEELM)

1987 ◽  
Vol 147 (2) ◽  
pp. 137-147 ◽  
Author(s):  
M. M. El Gomati ◽  
J. A. D. Matthew
Keyword(s):  
Low Energy ◽  
Energy Electron ◽  
Electron Loss ◽  
Low Energy Electron
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