Non-Destructive, Large-Scale Imaging of Anti-Phase Disorder in GaP Epilayers on Si(001) Using Low-Energy Electron Microscopy

2012 ◽  
Vol 45 (4) ◽  
pp. 231-239 ◽  
Author(s):  
B. Borkenhagen ◽  
H. Doscher ◽  
T. Hannappel ◽  
G. Lilienkamp ◽  
W. Daum
Keyword(s):  
Electron Microscopy ◽  
Large Scale ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron ◽  
Non Destructive

scholarly journals Imaging Oxide-Covered Doped Silicon Structures Using Low-Energy Electron Microscopy

2007 ◽  
Vol 1026 ◽  
Author(s):  
Meredith Anderson ◽  
C.Y. Nakakura ◽  
K.F. Saiz ◽  
G.L. Kellogg
Keyword(s):  
Electron Microscopy ◽  
Low Energy ◽  
Energy Electron ◽  
Promising Technique ◽  
Microelectronic Devices ◽  
Thermal Oxide ◽  
Silicon Structures ◽  
Low Energy Electron ◽  
Mirror Mode ◽  
Non Destructive

AbstractLow energy electron microscopy (LEEM) operated at incident electron energies just above the “mirror” mode is used to image Si-based test devices. Significant p- vs. n- doping contrast is observed, even when the structures are covered with a ∼3.5 nm thermal oxide. The contrast arises from a difference in surface potential between the two regions and is related to both p-n work function differences and electron-beam-induced charging of the oxide. The results show that the LEEM is capable of characterizing pn junctions without complicated sample preparation and that it is a promising technique for rapid, non-destructive imaging of microelectronic devices.

Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-Principles

2010 ◽  
Vol 645-648 ◽  
pp. 597-602 ◽  
Author(s):  
Hiroyuki Kageshima ◽  
Hiroki Hibino ◽  
Masao Nagase
Keyword(s):  
Electron Microscopy ◽  
First Principles ◽  
Large Scale ◽  
Epitaxial Graphene ◽  
Low Energy ◽  
Energy Electron ◽  
First Principles Calculations ◽  
Graphene Growth ◽  
Good Spatial Resolution ◽  
Low Energy Electron

Epitaxial graphene growth on SiC is investigated using low-energy electron microscopy (LEEM) and first-principles calculations. LEEM is one of the most powerful tools to identify the thickness of graphene on SiC with a good spatial resolution. With the help of such LEEM, the thickness-dependent physical properties are identified by various experiments. It is shown that epitaxial graphene sheets continue even over steps of the substrate, and that a new graphene sheet often grows from step edges while the surface morphology changes drastically. Furthermore, the first-principles calculations also show the energetics of the epitaxial graphene growth on SiC. It is expected that the fine control of epitaxial graphene growth on SiC will open the way to novel graphene devices in the post-scaling era of the ultra-large-scale integrations (ULSI).

The potential of the scanning low energy electron microscopy for the examination of aluminum based alloys and composites

Microscopy ◽  
2005 ◽  
Vol 54 (2) ◽  
pp. 109-117 ◽  
Author(s):  
Kenji Matsuda ◽  
Susumu Ikeno ◽  
Ilona Müllerová ◽  
Luděk Frank
Keyword(s):  
Electron Microscopy ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron
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