scholarly journals Analytical Model and Numerical Simulation for the Transconductance and Drain Conductance of GaAs MESFETs

10.5772/47741 ◽  
2012 ◽  
Author(s):  
Saadeddine Khemissi
Keyword(s):  
Numerical Simulation ◽  
Analytical Model ◽  
Drain Conductance

A Drain Current and Transconductance Analytical Model for Symmetric Double Gate Junctionless FENT

2020 ◽  
Vol 65 ◽  
pp. 39-50
Author(s):  
N. Bora ◽  
N. Deka ◽  
R. Subadar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Drain Current ◽  
Double Gate ◽  
Double Integral ◽  
Electrical Parameters ◽  
Continuity Equations ◽  
Nanowire Transistor ◽  
Drain Conductance ◽  
Tcad Simulations

This paper presents an analytical model of various electrical parameters for an ultra thin symmetric double gate (SDG) junctionless field effect nanowire transistor (JLFENT). The model works for all the regions of operation of the nanowire transistor without using any fitting parameter. The surface potential is derived based on the solutions of Poisson’s and current continuity equations by using appropriate boundary conditions. The Pao–Sah double integral was used to obtain the drain current, transconductance and drain conductance. The results obtained from analytical model are validated by comparing with GENIUS 3D TCAD simulations. The simplicity of the model makes it appropriate to be a SPICE compatible model.

Simulation of the Steady-State Photocarrier Grating Method Applied to Amorphous Materials

1992 ◽  
Vol 258 ◽  
Author(s):  
C.-D. Abel ◽  
G. H. Bauer
Keyword(s):  
Numerical Simulation ◽  
Steady State ◽  
Electric Field ◽  
Closed Form ◽  
Analytical Model ◽  
Amorphous Materials ◽  
Grating Period ◽  
Amorphous Semiconductors ◽  
Closed Form Expression ◽  
Form Expression

ABSTRACTGeneral features of the steady-state photocarrier grating technique applied to amorphous semiconductors are investigated by complete numerical simulation. The results are interpreted with an analytical model which delivers a closed-form expression for β(A,E) assuming dominance of one carrier type. The variation of the electric field E instead of the grating period A is suggested as an easier and more accurate tool for the experimental technique.

Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 628-631
Author(s):  
Luigi di Benedetto ◽  
Gian Domenico Licciardo ◽  
Salvatore Bellone ◽  
Roberta Nipoti
Keyword(s):  
Experimental Data ◽  
Numerical Simulation ◽  
Temperature Coefficient ◽  
Analytical Model ◽  
Simple Formula ◽  
Carrier Lifetime ◽  
Analytical Prediction ◽  
First Order ◽  
Different Temperatures ◽  
Crossing Point

ForwardJD–VDcurves of 4H−SiC p−i−n diodes are analyzed by means of an analytical model in order to justify the presence of a crossing−point. The interlacing behaviour occurring in theJD–VDcurves of 4H−SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing−point behaviour. Comparisons with experimental data confirm the analytic and simulated results.

Multi-layered diffusive convection. Part 2. Dynamics of layer evolution

2010 ◽  
Vol 651 ◽  
pp. 465-481 ◽  
Author(s):  
TAKASHI NOGUCHI ◽  
HIROSHI NIINO
Keyword(s):  
Numerical Simulation ◽  
Numerical Model ◽  
Direct Numerical Simulation ◽  
Analytical Model ◽  
The Other ◽  
One Dimensional ◽  
Turbulent Entrainment ◽  
Diffusive Convection ◽  
Two Component

Evolution of layers in an unbounded diffusively stratified two-component fluid and its dynamics are studied by means of a direct numerical simulation (DNS) and an analytical model. The numerical simulation shows that the layers grow by repeating mergings with the neighbouring layers. By analysing the results of the numerical simulation, the mechanism of the merging is examined in detail. Two modes of merging are found to exist: one is the layer vanishing mode and the other is the interface vanishing mode. The vanishings of layers and interfaces are caused by turbulent entrainment at the interfaces. Based on the analysis of the numerical model, a one-dimensional asymmetric entrainment model is proposed. In the model, each layer is assumed to interact with its neighbouring layers through simplified convective entrainment laws. The model is applied to two simple configurations of layers and is proved to reproduce the layer evolutions found in the DNS successfully.

scholarly journals Normalization of double-circuit overhead line magnetic field inside Khrushchev building

2021 ◽  
pp. 38-41
Author(s):  
K. V. Chunikhin ◽  
V. S. Grinchenko
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Analytical Model ◽  
Reference Level ◽  
Overhead Line ◽  
Field Normalization ◽  
Living Space ◽  
The Magnetic Field

This paper deals with the mitigation of 110 kV double-circuit overhead line magnetic field inside five-story Khrushchev buildings. We show that the magnetic field can exceed the reference level 0.5 μT in 90 % part of living space. To mitigate the magnetic field, we propose the inverted L-shaped grid shield with conductors on the wall and in the attic of the building. Using the analytical model of the grid shield and the numerical simulation, we determine the parameters of the L-shaped grid shield which provides the magnetic field normalization in 97 % part of living space. Further improvement of the grid shield profile, in particular, the placement of some conductors in the basement, allows to reduce the quantity of metal of the shield by 15 % while maintaining the shielding efficiency. Also we consider the magnetic field normalization for the overhead line with a rated current of 500 A. In this case, the quantity of metal of the grid shield increases 2.74 times.

Basic Study on Vibrational Behavior of Piping Systems Supported by Elasto-Plastic Damper With Gap Support

2014 ◽  
Author(s):  
Keishi Tsujita ◽  
Atsuhiko Shintani ◽  
Tomohiro Ito ◽  
Chihiro Nakagawa
Keyword(s):  
Numerical Simulation ◽  
Analytical Model ◽  
Piping System ◽  
Response Behavior ◽  
Basic Study ◽  
Nonlinear Characteristics ◽  
Vibrational Behavior ◽  
Sinusoidal Input ◽  
Piping Systems

In this study, the vibrational behavior of piping systems supported by elasto-plastic dampers with gap supports was considered. First, an analytical model of L-type piping systems subjected to sinusoidal input was derived, including nonlinear characteristics of the elasto-plastic dampers and gap supports. Next, a numerical simulation was performed to verify the effect of the gap support on the piping system. The effect of the input characteristics on the response behavior of the piping system was investigated.

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