scholarly journals Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

10.5772/37758 ◽  
2012 ◽  
Author(s):  
Denis Shamiryan ◽  
Dmitriy V.
Keyword(s):  
Ion Implantation ◽  
Spectroscopic Ellipsometry

Analysis of High Dose Implanted Silicon by High Depth Resolution Rbs and Spectroscopic Ellipsometry and TEM

1984 ◽  
Vol 35 ◽  
Author(s):  
T. Lohner ◽  
G. Mezey ◽  
M. Fried ◽  
L. GhiţA ◽  
C. Ghiţa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Composite Structures ◽  
Depth Resolution ◽  
High Dose ◽  
Detailed Characterization ◽  
High Depth ◽  
Qualitative Picture

ABSTRACTOne of the applications of high dose ion implantation is to form surface alloys or compound layers. The detailed characterization of such composite structures is of great importance. This paper tries to answer the question: how can we outline, at least, a qualitative picture from the optical properties measured by ellipsometry of high dose Al and Sb implanted silicon. Attempts are done to separate the effect of implanted impurities from the dominant disorder contribution to the measured optical properties. As the ellipsometry does not provide information enough to decide the applicability of optical models therefore methods sensitive to the structure (channeling and TEM) were applied too.

Study of Ion Implanted Copper Laser Mirrors by Spectroscopic Ellipsometry

1986 ◽  
Vol 74 ◽  
Author(s):  
P. G. Snyder ◽  
A. Massengale ◽  
K. Memarzadeh ◽  
J. A. Woollam ◽  
D. C. Ingram ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Implantation ◽  
Void Fraction ◽  
Spectroscopic Ellipsometry ◽  
Low Energy ◽  
Near Surface ◽  
Cu Ions ◽  
Microscopic Surface ◽  
Ion Implanted

AbstractImplantation with 400 keV Ag or Cu ions improves the near-surface microstructural quality and reflectance of diamond turned and mechanically polished flat copper laser mirrors. Spectroscopic ellipsometry is sensitive to changes in either the microscopic surface roughness, or in the nearsurface substrate void fraction, and both parameters are observed to change upon implantation. Substrate density as a function of ion fluence peaks at about 5 × 10 15cm-2. Low energy (300 eV) Ar ion implantation can cause either a reduction or increase in microscopic surface roughness, depending on fluence.

Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry

2004 ◽  
Vol 455-456 ◽  
pp. 239-243 ◽  
Author(s):  
P. Petrik ◽  
E.R. Shaaban ◽  
T. Lohner ◽  
G. Battistig ◽  
M. Fried ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Spectroscopic Ellipsometry

Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry

2008 ◽  
Vol 5 (5) ◽  
pp. 1374-1377 ◽  
Author(s):  
T. Lohner ◽  
Z. Zolnai ◽  
P. Petrik ◽  
G. Battistig ◽  
J. Garcia López ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Complex Dielectric Function
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