Evaluation of Laser Scattering Technique and Spectroscopic Ellipsometry for In-Line Ion Implantation Characterization

2008 ◽  
Author(s):  
F. Milesi ◽  
E. Nolot ◽  
Z. Mehrez ◽  
F. Mazen ◽  
S. Favier ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Laser Scattering ◽  
Scattering Technique

Detection of small concentrations of N2+ in the atmosphere by a laser scattering technique

1976 ◽  
Vol 47 (4) ◽  
pp. 1519-1522 ◽  
Author(s):  
Jerry E. Solomon ◽  
Dennis M. Silva
Keyword(s):  
Laser Scattering ◽  
Scattering Technique

Analysis of High Dose Implanted Silicon by High Depth Resolution Rbs and Spectroscopic Ellipsometry and TEM

1984 ◽  
Vol 35 ◽  
Author(s):  
T. Lohner ◽  
G. Mezey ◽  
M. Fried ◽  
L. GhiţA ◽  
C. Ghiţa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Composite Structures ◽  
Depth Resolution ◽  
High Dose ◽  
Detailed Characterization ◽  
High Depth ◽  
Qualitative Picture

ABSTRACTOne of the applications of high dose ion implantation is to form surface alloys or compound layers. The detailed characterization of such composite structures is of great importance. This paper tries to answer the question: how can we outline, at least, a qualitative picture from the optical properties measured by ellipsometry of high dose Al and Sb implanted silicon. Attempts are done to separate the effect of implanted impurities from the dominant disorder contribution to the measured optical properties. As the ellipsometry does not provide information enough to decide the applicability of optical models therefore methods sensitive to the structure (channeling and TEM) were applied too.

Improved Defect Classification Techniques of a Laser Scattering Detection System for Post CMP Silicon Dioxide Wafers

2007 ◽  
Vol 991 ◽  
Author(s):  
Daniel Mateja ◽  
Toshi Kasai ◽  
Michael Denham ◽  
Haresh Siriwardane
Keyword(s):  
Light Scattering ◽  
Silicon Dioxide ◽  
Laser Light ◽  
Detection System ◽  
Incident Beam ◽  
Experimental Conditions ◽  
Laser Scattering ◽  
Scattering Geometry ◽  
Scattering Technique ◽  
Light Scattering Technique

ABSTRACTA laser light scattering technique was used for the identification of defects on silicon dioxide (SiO2) wafers polished with a tungsten CMP slurry. Defects were then classified as scratches and particles using scanning electron microscopy (SEM). The effects of the incident beam illumination and scattering geometry on the defect detection are examined. Appropriate experimental conditions for selective detection of scratches and particles are discussed in conjunction with the estimated defect count and fractional ratio for specific defect types and sizes. The findings are qualitatively consistent with predicted light scattering distributions simulated from silicon bare substrates.

Determination of solubilities of polymers in solvents by a laser scattering technique

1999 ◽  
Vol 158-160 ◽  
pp. 847-855 ◽  
Author(s):  
Kenji Ochi ◽  
Tohru Saito ◽  
Kazuo Kojima
Keyword(s):  
Laser Scattering ◽  
Scattering Technique
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