scholarly journals Formation of Ultrahigh Density Quantum Dots Epitaxially Grown on Si Substrates Using Ultrathin SiO2 Film Technique

10.5772/35995 ◽  
2012 ◽  
Author(s):  
Yoshiaki Nakamura ◽  
Masakazu Ichikaw
Keyword(s):  
Quantum Dots ◽  
Sio2 Film ◽  
Si Substrates ◽  
Ultrahigh Density

scholarly journals Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

2011 ◽  
Vol 22 (29) ◽  
pp. 295304 ◽  
Author(s):  
A Pérez del Pino ◽  
E György ◽  
I C Marcus ◽  
J Roqueta ◽  
M I Alonso
Keyword(s):  
Quantum Dots ◽  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
Si Substrates ◽  
Ge Quantum Dots ◽  
Self Assembled

Influence of ZnTe separation layer thickness on optical properties in CdTe/ZnTe double quantum dots on Si substrates

2020 ◽  
Vol 699 ◽  
pp. 137893
Author(s):  
Kee Hong Lim ◽  
Minh Tan Man ◽  
Anh Thi Le ◽  
Jin Chul Choi ◽  
Hong Seok Lee
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Layer Thickness ◽  
Double Quantum ◽  
Si Substrates ◽  
Double Quantum Dots

Recent progress of III–V quantum dot infrared photodetectors on silicon

2019 ◽  
Vol 7 (46) ◽  
pp. 14441-14453 ◽  
Author(s):  
Aobo Ren ◽  
Liming Yuan ◽  
Hao Xu ◽  
Jiang Wu ◽  
Zhiming Wang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Infrared Photodetectors ◽  
Heterogeneous Integration ◽  
Si Substrates ◽  
Quantum Dot Infrared Photodetectors ◽  
Infrared Photodetection

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

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