scholarly journals High Sensitivity Uncooled InAsSb Photoconductors with Long Wavelength

10.5772/35674 ◽  
2012 ◽  
Author(s):  
Yu Zhu
Keyword(s):  
High Sensitivity ◽  
Long Wavelength

A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

scholarly journals Proximity Array Device: A Novel Photon Detector Working in Long Wavelengths

2020 ◽  
Vol 5 (2) ◽  
pp. 33 ◽  
Author(s):  
S. Javad Rezvani ◽  
Daniele Di Gioacchino ◽  
Claudio Gatti ◽  
Carlo Ligi ◽  
Mariangela Cestelli Guidi ◽  
...  
Keyword(s):  
Vortex Dynamics ◽  
Characteristic Frequency ◽  
Tunneling Current ◽  
High Sensitivity ◽  
Photon Detector ◽  
Quasi Particle ◽  
Long Wavelength ◽  
Metal State ◽  
Photo Response ◽  
Junction Array

We present here an innovative photon detector based on the proximity junction array device (PAD) working at long wavelengths. We show that the vortex dynamics in PAD undergoes a transition from a Mott insulator to a vortex metal state by application of an external magnetic field. The PAD also evidences a Josephson I-V characteristic with the external field dependent tunneling current. At high applied currents, we observe a dissipative regime in which the vortex dynamics is dominated by the quasi-particle contribution from the normal metal. The PAD has a relatively high photo-response even at frequencies below the expected characteristic frequency while, its superconducting properties such as the order parameter and the Josephson characteristic frequency can be modulated via external fields to widen the detection band. This device represents a promising and reliable candidate for new high-sensitivity long-wavelength detectors.

scholarly journals Infrared optical properties of aged porous GaAs

2001 ◽  
Vol 16 (5) ◽  
pp. 1241-1244 ◽  
Author(s):  
S. Zangooie ◽  
M. Schubert ◽  
T. E. Tiwald ◽  
J. A. Woollam
Keyword(s):  
Optical Properties ◽  
High Sensitivity ◽  
Vibration Modes ◽  
Angle Of Incidence ◽  
Long Wavelength ◽  
Volume Porosity ◽  
Aging Properties ◽  
Solid Part ◽  
Porous Gaas ◽  
Infrared Optical Properties

Aging properties of porous GaAs were investigated nondestructively using variable angle of incidence infrared spectroscopic ellipsometry. In addition to the thickness and volume porosity, properties of the solid part of the porous material are investigated in terms of the long-wavelength dielectric function and chemical composition. The high sensitivity is employed to detect and identify infrared resonant absorptions related to different vibration modes of cubic and amorphous As2O3. Resonances centered at 333.3, 480, 785.8, 838, and 1045.5 cm−1 are from cubic As2O3, whereas resonances centered at 350, 490, and 808.5 cm−1 are from amorphous As2O3.

Real-Time Visualization and Monitoring of Physiological Dynamics by Aggregation-Induced Emission Luminogens (AIEgens)

2021 ◽  
Vol 14 (1) ◽  
pp. 413-435
Author(s):  
Xuewen He ◽  
Jacky W.Y. Lam ◽  
Ryan T.K. Kwok ◽  
Ben Zhong Tang
Keyword(s):  
Real Time ◽  
Near Infrared ◽  
Molecular Design ◽  
High Sensitivity ◽  
Microwave Emission ◽  
Excellent Performance ◽  
Disease Evolution ◽  
Aggregation Induced Emission ◽  
Long Wavelength ◽  
Real Time Visualization

Physiological dynamics in living cells and tissues are crucial for maintenance and regulation of their normal activities and functionalities. Tiny fluctuations in physiological microenvironments can leverage significant influences on cell growth, metabolism, differentiation, and apoptosis as well as disease evolution. Fluorescence imaging based on aggregation-induced emission luminogens (AIEgens) exhibits superior advantages in real-time sensing and monitoring of the physiological dynamics in living systems, including its unique properties such as high sensitivity and rapid response, flexible molecular design, and versatile nano- to mesostructural fabrication. The introduction of canonic AIEgens with long-wavelength, near-infrared, or microwave emission, persistent luminescence, and diversified excitation source (e.g., chemo- or bioluminescence) offers researchers a tool to evaluate the resulting molecules with excellent performance in response to subtle fluctuations in bioactivities with broader dimensionalities and deeper hierarchies.

scholarly journals A Red Emissive Fluorescent Turn-on Sensor for the Rapid Detection of Selenocysteine and Its Application in Living Cells Imaging

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4768 ◽  
Author(s):  
Zongcheng Wang ◽  
Huihuang Zheng ◽  
Chengliang Zhang ◽  
Dongfang Tang ◽  
Qiyao Wu ◽  
...  
Keyword(s):  
Fluorescent Sensor ◽  
High Sensitivity ◽  
Living Cells ◽  
Fluorescent Sensors ◽  
Quantitative Detection ◽  
Fast Reaction ◽  
Detection Range ◽  
Long Wavelength ◽  
Turn On

The content of selenocysteine in cells has an important effect on a variety of human diseases, and the detection of selenocysteine by fluorescent sensors in vivo has shown many advantages. In order to further develop fast-reaction-time, good-selectivity, and high-sensitivity long-wavelength selenocysteine fluorescent sensors, we designed and synthesized the compound YZ-A4 as a turn-on fluorescent sensor to detect the content of selenocysteine. The quantitative detection range of the sensor YZ-A4 to selenocysteine was from 0 to 32 μM, and the detection limit was as low as 11.2 nM. The sensor displayed a rapid turn-on response, good selectivity, and high sensitivity to selenocysteine. Finally, we have demonstrated that YZ-A4 could be used for fluorescence imaging of selenocysteine in living cells.

A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBT photoreceiver module for long-wavelength transmission systems

1995 ◽  
Vol 7 (2) ◽  
pp. 182-184 ◽  
Author(s):  
L.M. Lunardi ◽  
S. Chandrasekhar ◽  
A.H. Gnauck ◽  
C.A. Burrus ◽  
R.A. Hamm ◽  
...  
Keyword(s):  
High Performance ◽  
High Sensitivity ◽  
Transmission Systems ◽  
Long Wavelength

PHOTOCONDUCTIVITY OF SOME POLYNUCLEAR AROMATIC HYDROCARBONS

1958 ◽  
Vol 36 (4) ◽  
pp. 607-614 ◽  
Author(s):  
J. Kommandeur ◽  
G. J. Korinek ◽  
W. G. Schneider
Keyword(s):  
Aromatic Hydrocarbons ◽  
Voltage Dependence ◽  
Singlet State ◽  
Spectral Response ◽  
Energy Levels ◽  
High Sensitivity ◽  
Polynuclear Aromatic Hydrocarbons ◽  
Weak Absorption ◽  
Long Wavelength ◽  
Response Voltage

The spectral response, voltage dependence, and intensity dependence of the surface photocurrent in naphthalene, terphenyl, pyrene, stilbene, and azulene have been measured. Pyrene and naphthalene have a high sensitivity for photoconduction at the long-wavelength edge of the optical absorption spectrum. In the spectral response of pyrene three peaks appear at 4475 Å, 4275 Å, and 4100 Å. It is suggested that these peaks are due to weak optical absorptions to energy levels which are highly efficient in promoting conduction. It is possible that a similar effect occurs in naphthalene, where maximum photoconductivity coincides with a weak absorption reported by McClure and Schnepp. Azulene only shows photoconductivity at wavelengths corresponding to absorption to the second singlet state.

scholarly journals Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

2012 ◽  
Vol 1437 ◽  
Author(s):  
Bart Kuyken ◽  
Xiaoping Liu ◽  
Richard M. Osgood ◽  
Roel Baets ◽  
Gunther Roelkens ◽  
...  
Keyword(s):  
Nonlinear Optics ◽  
Silicon Nanowire ◽  
Wavelength Region ◽  
High Sensitivity ◽  
Silicon On Insulator ◽  
Light Sources ◽  
Absorption Bands ◽  
Central Wavelength ◽  
Mid Infrared ◽  
Long Wavelength

ABSTRACTMost of the research on silicon-on-insulator integrated circuits has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands.We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm.Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

scholarly journals High sensitivity bolometers based on metal nanoantenna dimers with a nanogap filled with vanadium dioxide

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Dukhyung Lee ◽  
Dasom Kim ◽  
Dai-Sik Kim ◽  
Hyeong-Ryeol Park ◽  
Changhee Sohn ◽  
...  
Keyword(s):  
Vanadium Dioxide ◽  
Field Enhancement ◽  
Critical Factor ◽  
High Sensitivity ◽  
Finite Element Method Simulation ◽  
Promising Candidate ◽  
Long Wavelength ◽  
Electromagnetic Heating ◽  
Long Wavelength Infrared ◽  
Thermistor Material

AbstractOne critical factor for bolometer sensitivity is efficient electromagnetic heating of thermistor materials, which plasmonic nanogap structures can provide through the electric field enhancement. In this report, using finite element method simulation, electromagnetic heating of nanorod dimer antennas with a nanogap filled with vanadium dioxide (VO2) was studied for long-wavelength infrared detection. Because VO2 is a thermistor material, the electrical resistance between the two dimer ends depends on the dimer’s temperature. The simulation results show that, due to the high heating ability of the nanogap, the temperature rise is several times higher than expected from the areal coverage. This excellent performance is observed over various nanorod lengths and gap widths, ensuring wavelength tunability and ultrafast operating speed, thereby making the dimer structures a promising candidate for high sensitivity bolometers.

SUPERLATTICE MATERIALS FOR THE NEXT GENERATION OF LONG WAVELENGTH INFRARED DETECTORS

2000 ◽  
Vol 10 (01) ◽  
pp. 47-53
Author(s):  
G. J. BROWN ◽  
F. SZMULOWICZ ◽  
K. MAHALINGAM ◽  
A. SAXLER ◽  
R. LINVILLE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Imaging ◽  
Infrared Detector ◽  
High Sensitivity ◽  
Next Generation ◽  
Ir Detector ◽  
Detector Arrays ◽  
Long Wavelength ◽  
Detector Materials ◽  
Long Wavelength Infrared

New infrared (IR) detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous space-based infrared imaging applications. To meet these stringent requirements, new materials must be designed and grown using semiconductor heterostructures, such as quantum wells and superlattices, to tailor new optical and electrical properties unavailable in the current generation of materials. One of the most promising materials is a strained layer supperlattice (SLS) composed of thin InAs and GaInSb layers. While this material shows theoretical and early experimental promise, there are still several materials growth and processing issues to be addressed before this material can be transitioned to the next generation of infrared detector arrays. Our research is focused on addressing the basic materials design, growth, optical properties, and electronic transport issue of these superlattices.

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