scholarly journals Implantation Damage Formation in GaN and ZnO

10.5772/34751 ◽  
2012 ◽  
Author(s):  
Katharina Lorenz ◽  
Elke Wendler
Keyword(s):  
Implantation Damage

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

2006 ◽  
Vol 504 (1-2) ◽  
pp. 269-273
Author(s):  
H.Y. Chan ◽  
M.P. Srinivasan ◽  
F. Benistant ◽  
K.R. Mok ◽  
Lap Chan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Continuum Modeling ◽  
Implantation Damage ◽  
Post Implantation

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Implantation damage in amorphous silicon

1981 ◽  
Vol 43 (3) ◽  
pp. 419-431 ◽  
Author(s):  
G. Müller ◽  
P. G. Le Comber
Keyword(s):  
Amorphous Silicon ◽  
Implantation Damage

The Effect of Damage Density Profile on Moving specles in Ion-Induced Reactions

1986 ◽  
Vol 74 ◽  
Author(s):  
K. Tao ◽  
C. A. Hewett ◽  
S. S. Lau ◽  
Ch. Buchal ◽  
D. B. Poker
Keyword(s):  
Thermal Annealing ◽  
Density Profile ◽  
Mixing Conditions ◽  
Damage Distribution ◽  
Present Evidence ◽  
Atomic Transport ◽  
Implantation Damage ◽  
Metal Semiconductor Metal ◽  
Metal Metal ◽  
Two Factors

AbstractWe present evidence in this study that the moving species under ion mixing conditions are affected by the implantation damage distribution in the sample. This observation holds for metal-semiconductor, metal-metal and semiconductorsemiconductor systems. The direction of thermal annealing and atomic transport appears to play a role in ion-mixing as well. When these two factors are in the same direction, only one dominant moving species is observed. When these two factors are in opposite directions, both constituents can contribute to the atomic transport in ion mixing.

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