scholarly journals Laser Patterning Utilizing Masked Buffer Layer

10.5772/25182 ◽  
2011 ◽  
Author(s):  
Ori Stein ◽  
Micha Asscher
Keyword(s):  
Buffer Layer ◽  
Laser Patterning

Laser patterning of metallic films via buffer layer

2004 ◽  
Vol 557 (1-3) ◽  
pp. 5-12 ◽  
Author(s):  
Gabriel Kerner ◽  
Micha Asscher
Keyword(s):  
Buffer Layer ◽  
Metallic Films ◽  
Laser Patterning

Buffer Layer Assisted Laser Patterning of Metals on Surfaces

Nano Letters ◽  
2004 ◽  
Vol 4 (8) ◽  
pp. 1433-1437 ◽  
Author(s):  
Gabriel Kerner ◽  
Micha Asscher
Keyword(s):  
Buffer Layer ◽  
Laser Patterning

Weakly bound buffer layer as a template for metallic nano-clusters growth and film laser-patterning

2007 ◽  
Vol 253 (15) ◽  
pp. 6545-6549 ◽  
Author(s):  
Elad Gross ◽  
Ori Stein ◽  
Micha Asscher
Keyword(s):  
Buffer Layer ◽  
Weakly Bound ◽  
Laser Patterning

Microstructural changes of Aluminum Nitride after laser irradiation and electroless copper deposition

1994 ◽  
Vol 52 ◽  
pp. 636-637
Author(s):  
S. Cao ◽  
A. J. Pedraza ◽  
L. F. Allard
Keyword(s):  
Aluminum Nitride ◽  
Laser Irradiation ◽  
Electroless Deposition ◽  
Thermal Evaporation ◽  
Surface Region ◽  
Near Surface ◽  
Laser Patterning ◽  
Electroless Copper ◽  
Excimer Laser Irradiation ◽  
Laser Effect

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

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