scholarly journals Self-Standing Graphene Sheets Prepared with Chemical Vapor Deposition and Chemical Etching

10.5772/20691 ◽  
2011 ◽  
Author(s):  
Genki Odahara ◽  
Tsuyoshi Ishikawa ◽  
Kazuya Fukase ◽  
Shigeki Otani ◽  
Chuhei Oshima ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Graphene Sheets

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

scholarly journals Upcycling Waste Lard Oil into Vertical Graphene Sheets by Inductively Coupled Plasma Assisted Chemical Vapor Deposition

Nanomaterials ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 318 ◽  
Author(s):  
Angjian Wu ◽  
Xiaodong Li ◽  
Jian Yang ◽  
Changming Du ◽  
Wangjun Shen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Graphene Sheets ◽  
Inductively Coupled

Growth of Large Transparent and Conducting Graphene Sheets Using Chemical Vapor Deposition

2019 ◽  
Vol 25 (10) ◽  
pp. 59-61
Author(s):  
Hye Jin Park ◽  
Viera Skakalova ◽  
Jannik Meyer ◽  
S. Roth ◽  
Klaus Von Klitzing
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Sheets

scholarly journals Controlled Island Formation of Large-Area Graphene Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor

ACS Omega ◽  
2019 ◽  
Vol 4 (5) ◽  
pp. 8758-8766 ◽  
Author(s):  
Harsh A. Chaliyawala ◽  
Narasimman Rajaram ◽  
Roma Patel ◽  
Abhijit Ray ◽  
Indrajit Mukhopadhyay
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Sheets ◽  
Large Area ◽  
Island Formation

Chemical Vapor Deposition Synthesis and Raman Spectroscopic Characterization of Large-Area Graphene Sheets

2013 ◽  
Vol 117 (39) ◽  
pp. 9454-9461 ◽  
Author(s):  
Chun-Da Liao ◽  
Yi-Ying Lu ◽  
Srinivasa Reddy Tamalampudi ◽  
Hung-Chieh Cheng ◽  
Yit-Tsong Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Graphene Sheets ◽  
Large Area ◽  
Raman Spectroscopic

Nanopore Formation on SOI(100) by CH3SiH3 Pulse Jet CVD: SiC Growth Temperature Dependence

2013 ◽  
Vol 750 ◽  
pp. 252-255
Author(s):  
Yoshifumi Ikoma ◽  
Yuta Nishino ◽  
Shouhei Anan ◽  
Toshiaki Abe ◽  
Hirofumi Sakita
Keyword(s):  
Chemical Vapor Deposition ◽  
Pore Size ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Pore Density ◽  
Growth Temperature Dependence ◽  
Pulse Jet

We investigated the formation of nanopores on top Si layers of silicon on insulator substrates by CH3SiH3pulse jet chemical vapor deposition. Nanopores were obtained by chemical etching of the buried oxide layer below the pits which were introduced during the SiC growth. The high nanopore density was obtained when the SiC growth temperature was set at 925 °C. The nanopore density gradually decreased with increasing the temperature at higher SiC growth temperature. The pore size increased with increasing the SiC growth temperature. These results suggest that pore density and size strongly depend on the SiC growth temperature.

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