scholarly journals Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics

10.5772/15537 ◽  
2011 ◽  
Author(s):  
Moumita Mukherjee
Keyword(s):  
Silicon Carbide ◽  
Transit Time ◽  
High Power ◽  
New Frontier

Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

scholarly journals Effects of High-power Argon Excimer Laser Irradiation on Polycrystalline Silicon Carbide Mirrors.

1992 ◽  
Vol 20 (12) ◽  
pp. 970-979
Author(s):  
Masato OHMUKAI ◽  
Hiroyoshi NAITO ◽  
Masahiro OKUDA ◽  
Kou KUROSAWA ◽  
Wataru SASAKI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
High Power ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Excimer Laser Irradiation

Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors

2002 ◽  
Vol 17 (6) ◽  
pp. 1073-1079 ◽  
Author(s):  
P.B. Shah ◽  
B.R. Geil ◽  
M.E. Ervin ◽  
T.E. Griffin ◽  
S.B. Bayne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power

Study on structural characteristics of Ka-band high power millimeter wave radial transit time oscillator

2019 ◽  
Vol 26 (1) ◽  
pp. 013101 ◽  
Author(s):  
Haitao Wang ◽  
Jun Zhang ◽  
Fangchao Dang ◽  
Baoliang Qian
Keyword(s):  
Millimeter Wave ◽  
Transit Time ◽  
High Power ◽  
Structural Characteristics ◽  
Ka Band
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