scholarly journals Avalanche Photodiodes in Submicron CMOS Technologies for High-Sensitivity Imaging

Author(s):  
Gian-Franco Dalla ◽  
Lucio Pancheri ◽  
David Stoppa ◽  
Robert Henderson ◽  
Justin Richardso
2008 ◽  
Author(s):  
Andrew R. J. Marshall ◽  
Chee Hing Tan ◽  
Matthew J. Steer ◽  
John P. R. David

2017 ◽  
Vol 5 (4) ◽  
Author(s):  
E. A. Jafarova ◽  
Z. Y. Sadygov ◽  
A. A. Dovlatov ◽  
L. A. Aliyeva ◽  
E. S. Tapdygov ◽  
...  

2019 ◽  
Vol 13 (10) ◽  
pp. 683-686 ◽  
Author(s):  
Xin Yi ◽  
Shiyu Xie ◽  
Baolai Liang ◽  
Leh W. Lim ◽  
Jeng S. Cheong ◽  
...  

2019 ◽  
Vol 24 (1) ◽  
pp. 1-8
Author(s):  
Wenzhou Wu ◽  
Zhi Liu ◽  
Jun Zheng ◽  
Yuhua Zuo ◽  
Buwen Cheng

2007 ◽  
Vol 19 (10) ◽  
pp. 765-767 ◽  
Author(s):  
Eiji Yagyu ◽  
Eitaro Ishimura ◽  
Masaharu Nakaji ◽  
Yohei Mikami ◽  
Toshitaka Aoyagi ◽  
...  

2006 ◽  
Vol 527-529 ◽  
pp. 1461-1464 ◽  
Author(s):  
Feng Yan ◽  
Xiao Bin Xin ◽  
Petre Alexandrov ◽  
Carl M Stahle ◽  
Bing Guan ◽  
...  

A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiC photo-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are many orders of magnitude higher than the D* of other solid state detectors, and for the first time, comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursue the ultimate sensitivity. By operating the SiC APDs at a linear mode gain over 106, single photoncounting avalanche photodiodes (SPADs) in UV have been demonstrated.


Sign in / Sign up

Export Citation Format

Share Document