scholarly journals Effects of B-Site Donor and Acceptor Doping in Pb-Free (Bi0.5Na0.5)TiO3 Ceramics

10.5772/13903 ◽  
2010 ◽  
Author(s):  
Yeon Soo ◽  
Myong Ho
Keyword(s):  
Acceptor Doping ◽  
Donor And Acceptor

scholarly journals Effects of donor and acceptor doping on dielectric and ferroelectric properties of Ba0.7Ca0.3TiO3 lead-free ceramics

2017 ◽  
Vol 695 ◽  
pp. 1329-1335 ◽  
Author(s):  
Panupong Jaiban ◽  
Anucha Watcharapasorn ◽  
Rattikorn Yimnirun ◽  
Ruyan Guo ◽  
Amar S. Bhalla
Keyword(s):  
Ferroelectric Properties ◽  
Lead Free ◽  
Acceptor Doping ◽  
Lead Free Ceramics ◽  
Donor And Acceptor

Donor and acceptor doping effects on the electrical conductivity of CaBi2 Nb2 O9 ceramics

2013 ◽  
Vol 210 (6) ◽  
pp. 1121-1127 ◽  
Author(s):  
Huanbei Chen ◽  
Xiangxin Guo ◽  
Zhonghui Cui ◽  
Jiwei Zhai
Keyword(s):  
Electrical Conductivity ◽  
Acceptor Doping ◽  
Doping Effects ◽  
Donor And Acceptor

Unusual consequences of donor and acceptor doping on the thermoelectric properties of the MgAg0.97Sb0.99 alloy

2018 ◽  
Vol 6 (6) ◽  
pp. 2600-2611 ◽  
Author(s):  
Y. Liu ◽  
D. Z. Zhou ◽  
Y. Q. Li ◽  
A. J. Hong ◽  
J. H. Sui ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Acceptor Doping ◽  
Donor And Acceptor

MgAgSb alloys have been demonstrated to be one of the two best classes of low-temperature thermoelectric materials.

Microstructural engineering through donor and acceptor doping in the grain and grain boundary of a polycrystalline semiconducting ceramic

1992 ◽  
Vol 7 (12) ◽  
pp. 3280-3295 ◽  
Author(s):  
Tapan K. Gupta
Keyword(s):  
Grain Boundary ◽  
Lattice Structure ◽  
Acceptor Doping ◽  
Host Crystal ◽  
Zno Varistor ◽  
Current Voltage ◽  
Donor And Acceptor ◽  
Boundary Properties ◽  
Current Voltage Characteristics ◽  
Semiconducting Ceramic

This paper deals with the concept of microstructural engineering through donor and acceptor dopings within the grain and at the grain boundary of a polycrystalline semiconducting ceramic. These concepts are derived from an analysis of the “prebreakdown” and the “upturn” current-voltage characteristics of a ZnO varistor and from the construction of corresponding defect models as a function of donor and acceptor dopants at the grain and grain boundary. By using Li, Al, and Na as dopants, it is shown that the dopants can be grain or grain boundary specific in the ZnO microstructure and that they can act as donors, acceptors, or both, depending on the nature and concentration of dopants and their location on the host crystal lattice structure. In the case of the ZnO varistor, the grain and grain boundary properties can thus be tuned independently or concurrently by systematic engineering of the entire microstructure through defect dopings that are specific to the grain, grain boundary, or both. Following a detailed analysis of the defect models thus developed for the ZnO varistor, a set of ground rules are proposed for applying these concepts of donor and acceptor dopings at the grain and grain boundary to the general case of microstructural engineering in a polycrystalline semiconducting ceramic.

Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE

1995 ◽  
Vol 395 ◽  
Author(s):  
Robert F. Davis ◽  
T. W. Weeks ◽  
M. D. Bremser ◽  
S. Tanaka ◽  
R. S. Kern ◽  
...  
Keyword(s):  
Thin Films ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Growth Direction ◽  
Buffer Layers ◽  
Acceptor Doping ◽  
Light Emitting ◽  
Surface Migration ◽  
Donor And Acceptor ◽  
Layer Stacking

ABSTRACTOrganometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) are the most common methods for the growth of thin films of A1N and GaN. Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AIN, GaN and AlxGa1−xN thin films primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces double positioning boundaries in A1N and the alloys at the SiC steps; this sequence problem appears to discourage the two-dimensional nucleation of GaN. Films of these materials grown by MBE at 650°C are textured; monocrystalline films are achieved between 850°C (pure GaN) and 1050°C (pure A1N) by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantial defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed. Selected issues surrounding the growth of these materials with particular examples drawn from the authors' research are presented herein.

Stoichiometric Determination of Graphite Intercalation Compounds Using Rutherford Backscatiering Spectrometry

1983 ◽  
Vol 27 ◽  
Author(s):  
L. Salamanca-Riba ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Experimental Error ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Intercalation Compounds ◽  
Graphite Intercalation Compounds ◽  
X Ray ◽  
Donor And Acceptor ◽  
Graphite Intercalation ◽  
Non Destructive

ABSTRACTRutherford backscattering spectrometry (RBS) is used to characterize the stoichiometry of graphite intercalation compounds (GIC). Specific application is made to several stages of different donor and acceptor compounds and to commensurate and incommensurate intercalants. A deviation from the theoretical stoichiometry is measured for most of the compounds using this non-destructive method. Within experimental error, the RBS results agree with those obtained from analysis of the (00ℓ) x-ray diffractograms and weight uptake measurements on the same samples.

Investigation of Adsorption Effect of Carbon Monoxide on Coniine: A DFT Study

2021 ◽  
Vol 17 ◽  
Author(s):  
Siyamak Shahab ◽  
Masoome Sheikhi ◽  
Mehrnoosh Khaleghian ◽  
Marina Murashko ◽  
Mahin Ahmadianarog ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Gas Phase ◽  
Density Functional ◽  
Energy Gap ◽  
Adsorption Effect ◽  
Chemical Shift Tensors ◽  
Solvent Water ◽  
Donor And Acceptor ◽  
Before And After ◽  
Electron Donor And Acceptor

: For the first time in the present study, the non-bonded interaction of the Coniine (C8H17N) with carbon monoxide (CO) was investigated by density functional theory (DFT/M062X/6-311+G*) in the gas phase and solvent water. The adsorption of the CO over C8H17N was affected on the electronic properties such as EHOMO, ELUMO, the energy gap between LUMO and HOMO, global hardness. Furthermore, chemical shift tensors and natural charge of the C8H17N and complex C8H17N/CO were determined and discussed. According to the natural bond orbital (NBO) results, the molecule C8H17N and CO play as both electron donor and acceptor at the complex C8H17N/CO in the gas phase and solvent water. On the other hand, the charge transfer is occurred between the bonding, antibonding or nonbonding orbitals in two molecules C8H17N and CO. We have also investigated the charge distribution for the complex C8H17N/CO by molecular electrostatic potential (MEP) calculations using the M062X/6-311+G* level of theory. The electronic spectra of the C8H17N and complex C8H17N/CO were calculated by time dependent DFT (TD-DFT) for investigation of the maximum wavelength value of the C8H17N before and after the non-bonded interaction with the CO in the gas phase and solvent water. Therefore, C8H17N can be used as strong absorbers for air purification and reduce environmental pollution.

Polarity of a dative bond Donor and acceptor electronegativities

2018 ◽  
Vol 15 (4e) ◽  
pp. 335
Author(s):  
Julio J. Andrade Gamboa
Keyword(s):  
Dative Bond ◽  
Donor And Acceptor

<span>La polaridad de un enlace dativo entre átomos idénticos no puede ser explicada con base en las electronegatividades usuales. Si suponemos que ambos átomos tienen la misma electronegatividad, las cargas atómicas serán (tomando como unidad el valor absoluto de la carga del electrón) las cargas formales; esto es: —1 para el átomo aceptor y +1 para el átomo dador. Esto implica una polaridad anormalmente alta para un enlace covalente.</span>

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