Unusual consequences of donor and acceptor doping on the thermoelectric properties of the MgAg0.97Sb0.99 alloy

2018 ◽  
Vol 6 (6) ◽  
pp. 2600-2611 ◽  
Author(s):  
Y. Liu ◽  
D. Z. Zhou ◽  
Y. Q. Li ◽  
A. J. Hong ◽  
J. H. Sui ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Acceptor Doping ◽  
Donor And Acceptor

MgAgSb alloys have been demonstrated to be one of the two best classes of low-temperature thermoelectric materials.

Synthesis and thermoelectric properties of antifluorite materials

2007 ◽  
Vol 1044 ◽  
Author(s):  
Xiunu Sophie Lin ◽  
Dongli Wang ◽  
Matthew Beekman ◽  
George Nolas
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Group Iv ◽  
Optimal Performance ◽  
Structure Property ◽  
Structure Property Relationships ◽  
Elemental Semiconductors

AbstractThe compounds Mg2X (where X=Si, Ge, Sn) crystallize in the antifluorite structure. They possess properties that are similar to that of the group IV elemental semiconductors thus they have long been recognized as good candidates for thermoelectric applications. In addition, their properties can be readily tuned by doping or alloying. However, optimal performance of these materials requires continued investigation. We present low-temperature transport properties measurements of Sb doped Mg2X. Structure-property relationships are reported while their thermoelectric properties are investigated systematically in order to elucidate their potential as thermoelectric materials.

scholarly journals Thermoelectric Materials: Thermoelectric Properties of Novel Semimetals: A Case Study of YbMnSb 2 (Adv. Mater. 7/2021)

2021 ◽  
Vol 33 (7) ◽  
pp. 2170051
Author(s):  
Yu Pan ◽  
Feng‐Ren Fan ◽  
Xiaochen Hong ◽  
Bin He ◽  
Congcong Le ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Materials

Effect of Electron-Phonon Coupling on Transport Properties of Monolayers of ZrS2, BiI3 and PbI2: A thermoelectric Perspective

2021 ◽  
Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh
Keyword(s):  
Relaxation Time ◽  
Band Structure ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Waste Heat ◽  
Transport Coefficients ◽  
Electrical Energy ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...

The low-temperature thermoelectric properties of tin-doped bismuth

1979 ◽  
Vol 9 (12) ◽  
pp. 2387-2398 ◽  
Author(s):  
J Boxus ◽  
J Heremans ◽  
J -P Michenaud ◽  
J -P Issi
Keyword(s):  
Low Temperature ◽  
Thermoelectric Properties

Fabrication of Bi-Te Based Thermoelectric Semiconductors by Using Hybrid Powders

2005 ◽  
Vol 297-300 ◽  
pp. 875-880
Author(s):  
Cheol Ho Lim ◽  
Ki Tae Kim ◽  
Yong Hwan Kim ◽  
Dong Choul Cho ◽  
Young Sup Lee ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Single Crystals ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Bending Strength ◽  
Mixing Ratio ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-merit 2.9×10-3/K were obtained by controlling the mixing ratio of large powders (PL) and small powders (PS). Compared with the conventionally prepared single crystal thermoelectric materials, the bending strength was increased up to more than three times and the figure-of-merit Z was similar those of single crystals. It is expected that the mechanical properties could be improved by using hybrid powders without degradation of thermoelectric properties.

Low-temperature galvanomagnetic, magnetic, and thermoelectric properties ofMo3Sb7−xTex(x=0.0, 0.3, 1.0, 1.6, and 1.8)

2009 ◽  
Vol 79 (23) ◽  
Author(s):  
C. Candolfi ◽  
B. Lenoir ◽  
A. Dauscher ◽  
J. Hejtmánek ◽  
J. Tobola
Keyword(s):  
Low Temperature ◽  
Thermoelectric Properties

LOW TEMPERATURE THERMOELECTRIC PROPERTIES AND AGING PHENOMENA OF NANOSTRUCTURED p-TYPE Bi2-XSbXTe3 (x = 1.46, 1.48, 1.52 AND 1.55)

2013 ◽  
Vol 06 (05) ◽  
pp. 1340008 ◽  
Author(s):  
DALE HITCHCOCK ◽  
YEN-LIANG LIU ◽  
YUFEI LIU ◽  
TERRY M. TRITT ◽  
JIAN HE ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Low Temperature ◽  
Thermoelectric Properties ◽  
Optimal Composition ◽  
Ambient Conditions ◽  
Bulk Materials ◽  
The Past ◽  
Aging Phenomena ◽  
P Type ◽  
Cold Pressed

Over the past decade the widely used p-type ( Bi 2-x Sb x) Te 3 bulk thermoelectric materials have been subject to various nanostructuring processes for higher thermoelectric performance. However, these nanostructuring processing were conducted on compositions optimized for bulk materials (x ~ 1.52–1.55). This leads to the question of whether the optimal composition for bulk materials is the same for their nanoscale counterparts. In this work we hydrothermally grew Bi 2-x Sb x Te 3 nanopowders (nominally, x = 1.46, 1.48, 1.52 and 1.55) and measured their thermoelectric properties on cold-pressed vacuum-sintered pellets (74–78% of the theoretical density) below 300 K. The measurements were conducted 18 months apart to probe the aging phenomena, with the samples stored in ambient conditions. We have found that (i) the peak of thermopower shifts to lower temperatures upon nanostructuring but it shifts back to higher temperatures upon aging; (ii) the electrical conductivity degrades by a factor of 1.5–2.3 upon aging while the temperature dependence is largely retained; and (iii) the ZT of freshly made samples is sensitive to the x value, a maximum ZT ~ 1.25(~ 0.62) at ~ 270 K (~ 255 K) was attained in the freshly made sample x = 1.55(x = 1.46), respectively; while the ZT of aged samples is significantly lowered by a factor of 2–4 but lesser x-dependent. These observations have been discussed in the context of charge buildup and compensation at grain boundaries.

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