scholarly journals Electrodeposition of Bi-Se thin films involving ethylene glycol based electrolytes

2021 ◽  
Vol 11 (1) ◽  
pp. 51-58
Author(s):  
Sevinj Javadova ◽  
Vusala Asim Majidzade ◽  
Akif Shikhan Aliyev ◽  
Asmat Nizami Azizova ◽  
Dilgam Babir Tagiyev
Keyword(s):  
Thin Films ◽  
Ethylene Glycol ◽  
Phase Analysis ◽  
Polarization Curves ◽  
Potential Range ◽  
X Ray ◽  
Galvanostatic Method ◽  
Optimal Mode ◽  
Treatment Step ◽  
Heat Treatment Step

The work is devoted to the electrochemical deposition of Bi-Se thin films from ethylene glycol-based electrolytes. The studies have been carried out by potentiodynamic and galvanostatic methods under various conditions, using Pt and Ni electrodes. By recording cyclic and linear polarization curves, the potential range of deposition of thin Bi-Se films on Pt (-0.75 to -1.2 V) and Ni (0.2 to -0.85 V) electrodes was determined. A comparison of the polarization curves of two electrodes showed that co-electrodeposition of Bi and Se occurs in approximately the same potential range. In order to find the optimal mode and composition of the electrolyte, the effect of various factors (concentration of initial components, temperature, etc.) on the process of co-electrodeposition of Bi with Se was studied. In addition, the samples of Bi-Se thin films obtained on Ni electrodes using the galvanostatic method were studied by scanning electron microscope (SEM) and X-ray phase analysis. The results of X-ray phase analysis confirmed the formation of thin Bi2Se3 films with and without additional heat treatment step. Elemental analysis of obtained films carried out by EDS shows that films contained 62.79 wt. % Bi and 37.21 wt. % Se.

X-ray phase analysis with depth profiling for thin films

1992 ◽  
Vol 213 (1) ◽  
pp. 13-18 ◽  
Author(s):  
Q.Z. Cong ◽  
D.Y. Yu ◽  
L.J. Weng ◽  
F.Q. Zhang
Keyword(s):  
Thin Films ◽  
Phase Analysis ◽  
Depth Profiling ◽  
X Ray

scholarly journals Synthesis of CH3NH3PbI3 hybrid perovskite crystals for optoelectronic devices

2022 ◽  
Vol 2155 (1) ◽  
pp. 012035
Author(s):  
S Dyussembekova ◽  
V Kinev ◽  
A Smirnova ◽  
P Gladyshev
Keyword(s):  
Thin Films ◽  
Phase Analysis ◽  
Optoelectronic Devices ◽  
Optimal Conditions ◽  
Review Of The Literature ◽  
Inorganic Perovskite ◽  
X Ray ◽  
Hybrid Perovskite

Abstract This article is deals with the synthesis of hybrid organic-inorganic perovskite crystals. We present a brief review of the literature devoted to the synthesis of perovskite crystals. We have analyzed methods for the synthesis of perovskite crystals to select optimal conditions. Bulk perovskite crystals of CH3NH3PbI3 were synthesized. The resulting crystals were analyzed by X-ray phase analysis, which confirms the formation of tetragonal perovskite crystals and can be used to obtain thin films.

A method for measuring the mineralogical variation of spoils from British collieries

Clay Minerals ◽  
1976 ◽  
Vol 11 (1) ◽  
pp. 31-50 ◽  
Author(s):  
R. J. Collins
Keyword(s):  
Chemical Analysis ◽  
Ethylene Glycol ◽  
Phase Analysis ◽  
Clay Mineral ◽  
Internal Standard ◽  
Standard Technique ◽  
Mineralogical Analysis ◽  
X Ray ◽  
Peak Areas

AbstractA semi-quantitative mineralogical analysis of colliery spoil by XRD has been developed and used to compare spoils from eight collieries, in connection with work on the production of synthetic dense aggregates from spoil. Phase analysis of clay, which constitutes over half of all these spoils, is carried out by comparing X-ray peak areas of oriented specimens after heating and treatment with ethylene glycol. Total clay is obtained by difference, after determination of quartz and other minerals by an internal standard technique, allowing calculation of the proportion of each clay mineral. The results are tested against chemical analysis and a semiquantitative X-ray analysis of the chlorite present indicated that it is a highly ferruginous variety. Differences are detected in the mineralogy of all eight spoils but, except for the predominance of kaolinite in the spoils from Scotland, these differences are small.

scholarly journals Growth of the Electrodeposited NiX2 (X= Te, Se) Thin Films

2020 ◽  
pp. 55-69
Author(s):  
T. Joseph Sahaya Anand ◽  
Rajes K. M. Rajan ◽  
Md Radzai Said ◽  
Lau Kok Tee
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Compositional Analysis ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Potential Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
P Type

Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.

Rapid qualitative phase analysis in highly textured thin films by x-ray diffraction

2008 ◽  
Vol 79 (4) ◽  
pp. 043904 ◽  
Author(s):  
Cesare Borgia ◽  
Sven Olliges ◽  
Ralph Spolenak
Keyword(s):  
Thin Films ◽  
Phase Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Qualitative Phase

scholarly journals Микроструктура и комбинационное рассеяние света тонких пленок Cu-=SUB=-2-=/SUB=-ZnSnSe-=SUB=-4-=/SUB=-, осажденных на гибкие металлические подложки

2018 ◽  
Vol 52 (2) ◽  
pp. 227
Author(s):  
А.В. Станчик ◽  
В.Ф. Гременок ◽  
С.А. Башкиров ◽  
М.С. Тиванов ◽  
Р.Л. Юшкенас ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Phase Analysis ◽  
Layer By Layer ◽  
X Ray ◽  
Flexible Metal ◽  
Scanning Electron

AbstractCu_2ZnSnSe_4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu_2ZnSnSe_4 films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Analysis of electroless nickel thin films

1991 ◽  
Vol 49 ◽  
pp. 510-511 ◽  
Author(s):  
C. W. Price ◽  
E. F. Lindsey
Keyword(s):  
Thin Films ◽  
Inertial Confinement Fusion ◽  
Electroless Nickel ◽  
Inertial Confinement ◽  
Plating Bath ◽  
X Ray ◽  
Nickel Thin Films ◽  
Nickel Deposits ◽  
Confinement Fusion ◽  
Thickness Measurements

Thickness measurements of thin films are performed by both energy-dispersive x-ray spectroscopy (EDS) and x-ray fluorescence (XRF). XRF can measure thicker films than EDS, and XRF measurements also have somewhat greater precision than EDS measurements. However, small components with curved or irregular shapes that are used for various applications in the the Inertial Confinement Fusion program at LLNL present geometrical problems that are not conducive to XRF analyses but may have only a minimal effect on EDS analyses. This work describes the development of an EDS technique to measure the thickness of electroless nickel deposits on gold substrates. Although elaborate correction techniques have been developed for thin-film measurements by x-ray analysis, the thickness of electroless nickel films can be dependent on the plating bath used. Therefore, standard calibration curves were established by correlating EDS data with thickness measurements that were obtained by contact profilometry.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Electron diffraction studies of amorphous and polycrystalline thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 118-119
Author(s):  
D J H Cockayne ◽  
D R McKenzie
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Polycrystalline Materials ◽  
Good Resolution ◽  
Scattered Intensity ◽  
Radial Density ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Nitrogen Ion ◽  
Diffraction Patterns

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.

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