scholarly journals Electrochromism in tungsten oxide thin films prepared by chemical bath deposition

Author(s):  
Julijana Velevska ◽  
Nace Stojanov ◽  
Margareta Pecovska-Gjorgjevich ◽  
Metodija Najdoski

<p class="PaperAbstract"><span lang="EN-US">Tungsten oxide (WO<sub>3</sub>) thin films were prepared by a simple, economical, chemical bath deposition method onto fluorine doped tin oxide (FTO) coated glass substrates. The electrochemical properties of the films were characterized by cyclic voltammetry. The obtained films exhibited electrochromism, changing color from initially colorless to deep blue, and back to colorless. Visible transmittance spectra of (WO<sub>3</sub>) films were recorded in-situ in their both, bleached and colored states. From those spectra, absorption coefficient (</span><span lang="EN-US">a</span><span lang="EN-US">) and the optical energy gaps were evaluated. The dependence of the optical density on the charge density was examined and the coloration efficiency (</span><span lang="EN-US">h</span><span lang="EN-US">) was calculated to be 22.11 cm<sup>2 </sup>C<sup>-1</sup>. The response times of the coloring and bleaching to an abrupt potential change from -2.5 V to +2.5 V and reverse, were found to be 9.3 and 1.2 s respectively. The maximum light intensity modulation ability of the films, when the AM1.5 spectrum is taken as an input, was calculated to be about 50 %.</span></p>

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
R. Palomino-Merino ◽  
O. Portillo-Moreno ◽  
L. A. Chaltel-Lima ◽  
R. Gutiérrez Pérez ◽  
M. de Icaza-Herrera ◽  
...  

Nanocrystalline PbS thin films were prepared by Chemical Bath Deposition (CBD) at 40 ± 2°C onto glass substrates and their structural and optical properties modified by in-situ doping with Hg. The morphological changes of the layers were analyzed using SEM and the X-rays spectra showing growth on the zinc blende (ZB) face. The grain size determined by using X-rays spectra for undoped samples was found to be~36 nm, whereas with the doped sample was 32–20 nm. Optical absorption spectra were used to calculate theEg, showing a shift in the range 1.4–2.4 eV. Raman spectroscopy exhibited an absorption band~135 cm−1displaying only a PbS ZB structure.


2021 ◽  
pp. 138659
Author(s):  
Q.A. Drmosh ◽  
N.A. Al-Muhaish ◽  
Yousif Ahmed Al Wajih ◽  
Mir Waqas Alam ◽  
Z.H. Yamani

2014 ◽  
Vol 320 ◽  
pp. 309-314 ◽  
Author(s):  
Biswajit Ghosh ◽  
Kamlesh Kumar ◽  
Balwant Kr Singh ◽  
Pushan Banerjee ◽  
Subrata Das

2022 ◽  
Vol 580 ◽  
pp. 121409
Author(s):  
Abuzar Khan ◽  
Nouf Al-Muhaish ◽  
A.K. Mohamedkhair ◽  
Mohd Yusuf Khan ◽  
Mohammad Qamar ◽  
...  

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.


2009 ◽  
Vol 25 (02) ◽  
pp. 267-272
Author(s):  
YUAN Jia-Guo ◽  
◽  
ZHANG Yu-Zhi ◽  
LE Jun ◽  
SONG Li-Xin ◽  
...  

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.


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