scholarly journals Ellipsometric measurement of thickness of tin oxides grown by voltammetry in phosphate solution of pH 8.7

2016 ◽  
Vol 6 (4) ◽  
pp. 303
Author(s):  
Tiago Brandão Costa ◽  
Tania Maria Cavalcanti Nogueira ◽  
Ladário Da Silva

<p class="PaperAbstract"><span lang="EN-US">The voltammetry induced growth of tin oxides on tin in the buffer solution of 0.18 mol L<sup>-1</sup> Na<sub>2</sub>H<sub>2</sub>PO<sub>4</sub> and 0.18 mol L<sup>-1</sup> KH<sub>2</sub>PO<sub>4</sub> (pH 8.7) has been studied. Ex-situ ellipsometric mea­surements were made in an order to determine thicknesses of the grown oxides. From these results the film volume per charge unit, </span><span lang="EN-US">V</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US">, was calculated for different charge den­sities of the film. This parameter was used to calculate the variable ionic resistivity of the film, </span><span lang="EN-US">ρ</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US">, considered by the Ohmic model for the case of voltammetric growth of oxides on metals having a previously existing continuous film. Tin oxide films grown at 2 mV s<sup>-1</sup> showed to be less dense for values of charge density below 50 C m<sup>-2</sup>, having </span><span lang="EN-US">V</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US"> near <br /> 5.7x10<sup>-10</sup> m<sup>3</sup> C<sup>-1</sup>. For higher values of charge density, tin oxide films become denser, having </span><span lang="EN-US">V</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US"> near 0.5x10<sup>-10</sup> m<sup>3</sup> C<sup>-1</sup>. The calculated values of the variable ionic resistivity of the film during voltammetric growth showed that </span><span lang="EN-US">ρ</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US"> passes through a minimum (justifying the maximum in current densities). This behavior was also found by other authors in the cases of Zn, Nb, Ni and galvanized steel sheets.</span></p>

2017 ◽  
Vol 7 (2) ◽  
pp. 65
Author(s):  
Tiago Brandão Costa ◽  
Tania Maria Cavalcanti Nogueira ◽  
Ladário Da Silva

<p class="PaperAbstract"><span lang="EN-US">Voltammetry has been employed to study the growth of tin oxides in buffer solution of 0.3 mol L<sup>-1</sup> H<sub>3</sub>BO<sub>3</sub> + 0.15 mol L<sup>-1</sup> Na<sub>2</sub>B<sub>4</sub>O<sub>7</sub>·10H<sub>2</sub>O (pH 8.7). Voltammetric data were compared with the results of tin in a phosphate solution of pH 8.7, presented in the previous work, in order to study the influence of these anions on the growth of tin oxides. The thicknesses of grown oxides were determined using ex-situ ellipsometric technique and the volume per charge unity of the film, V<sub>f</sub>, was calculated for different charge densities of the film. The results showed that less dense films were obtained at higher sweep rates. Tin oxide films grown in phosphate solution at 2 mV s<sup>-1</sup> were denser than those grown in borate solution at the same sweep rate. The kinetic parameters, determined applying the ohmic model, showed that there are no significant differences between the kinetics at the metal/film interface of tin in borate and tin in phosphate solutions. Despite these facts, the ionic specific resistivity for oxide film growth in borate solution were significantly higher than in phosphate solution. This result indicates that incorporation of anions occurs during the growth of the films.</span></p>


1989 ◽  
Author(s):  
Paul G. Snyder ◽  
Bhola N. De ◽  
John A. .. WoolIam ◽  
T. J. Coutts ◽  
X. Li

2003 ◽  
Vol 21 (4) ◽  
pp. 1351-1354 ◽  
Author(s):  
Shinji Takayama ◽  
Toshifumi Sugawara ◽  
Akira Tanaka ◽  
Tokuji Himuro

2008 ◽  
Vol 254 (20) ◽  
pp. 6547-6553 ◽  
Author(s):  
Tong Jun Liu ◽  
Zheng Guo Jin ◽  
Li Rui Feng ◽  
Tao Wang

1985 ◽  
Vol 129 (1-2) ◽  
pp. 139-150 ◽  
Author(s):  
Gar B. Hoflund ◽  
Douglas A. Asbury ◽  
Richard E. Gilbert

2009 ◽  
Vol 469 (4-6) ◽  
pp. 313-317 ◽  
Author(s):  
Susmita Kundu ◽  
Dipten Bhattacharya ◽  
Jiten Ghosh ◽  
Pintu Das ◽  
Prasanta K. Biswas

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