scholarly journals New Phonon Dynamics in a Diamond Crystal during Post-Annealing

2013 ◽  
Vol 2 (2) ◽  
Author(s):  
Sachiko T. Nakagawa
Keyword(s):  
Diamond Crystal ◽  
Post Annealing ◽  
Phonon Dynamics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

scholarly journals Synthesis and post-annealing effects of alkaline-metal-ethylenediamine-intercalated superconductors A(C2H8N2) Fe2−Se2 (A= Li, Na) with Tc= 45 K

2014 ◽  
Vol 504 ◽  
pp. 8-11 ◽  
Author(s):  
Takashi Noji ◽  
Takehiro Hatakeda ◽  
Shohei Hosono ◽  
Takayuki Kawamata ◽  
Masatsune Kato ◽  
...  
Keyword(s):  
Alkaline Metal ◽  
Post Annealing ◽  
Annealing Effects

Fe-Induced electronic optimization of mesoporous Co–Ni oxide nanosheets as an efficient binder-free electrode for the oxygen evolution reaction

2021 ◽  
Vol 45 (14) ◽  
pp. 6424-6431
Author(s):  
Jingjing Ju ◽  
Jiajia Lu ◽  
Xiaoyue Shi ◽  
Hongwei Zhu ◽  
Han-Pu Liang
Keyword(s):  
Hydrothermal Method ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Mesoporous Structure ◽  
Post Annealing ◽  
Binder Free ◽  
Ni Oxide

An efficient binder-free OER electrode CoNiFeOx/NF with mesoporous structure was synthesized by a facile strategy of hydrothermal method and post-annealing.

Tuning the pinning direction of giant magnetoresistive sensor by post annealing process

2021 ◽  
Vol 64 (6) ◽  
Author(s):  
Zhiqiang Cao ◽  
Yiming Wei ◽  
Wenjing Chen ◽  
Shaohua Yan ◽  
Lin Lin ◽  
...  
Keyword(s):  
Annealing Process ◽  
Magnetoresistive Sensor ◽  
Post Annealing

Structural change by high-energy ion irradiation and post-annealing in EuBa2Cu3Oy

2002 ◽  
Vol 378-381 ◽  
pp. 527-530 ◽  
Author(s):  
H Sato ◽  
N Ishikawa ◽  
A Iwase ◽  
Y Chimi ◽  
T Hashimoto ◽  
...  
Keyword(s):  
Structural Change ◽  
Ion Irradiation ◽  
High Energy ◽  
Post Annealing

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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