scholarly journals Creation of Photoactive Inorganic/Organic Interfaces Using Occlusion Electrodeposition Process of Inorganic Nanoparticles During Electropolymerization of 2,2′:5′,2′′-Terthiophene

2016 ◽  
Vol 8 (2) ◽  
pp. 1
Author(s):  
Kasem K. Kasem ◽  
Christopher Santuzzi ◽  
Nick Daanen ◽  
Kortany Baker

<p>Photoactive (IOI) inorganic/organic interface assemblies were prepared using an occlusion electrodeposition method. Poly-2,2′:5′,2′′-Terthiophene (PTTh) were the organic thin films that occluded each of CdS, TiO<sub>2</sub>, and Zn-doped WO<sub>3</sub> nanoparticles.<strong> </strong>The energy band gap structures were investigated using spectroscopic and electrochemical techniques.<strong> </strong>The obtained assemblies were investigated in aqueous solutions under both dark and illuminated conditions. The results were compared with the behavior of PTTh thin film. Oxygen played an important role in minimizing electron/hole recombination as was evident by observed very low photocurrent when oxygen was removed by nitrogen purge. Results show that PTTh/CdS gave the greatest photocurrent, followed by PTTh/Zn-WO<sub>3</sub> and PTTh/TiO<sub>2</sub>.</p>

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.


2003 ◽  
Vol 5 (1) ◽  
pp. 3-6 ◽  
Author(s):  
Hak-Soo Kim ◽  
Eun-Ah Lee ◽  
Ju-Hyeon Lee ◽  
Chul-Hee Han ◽  
Jin-Wook Ha ◽  
...  

We have introduced the discharge photoelectrocatalytic system, in whichTiO2thin film coating on aluminum plate is subjected simultaneously to both UV irradiation and high voltages in excess of 3000 volts. Due to high voltagesO3is generated; however, efficient removal ofO3is observed in this photoelectrocatalytic system. In terms of the removal of volatile organic compounds (VOCs), the discharge photoelectrocatalytic system has been applied to the removal of aromatic compounds such as benzene and toluene. Based on the experimental data, the rates of the removal of these compounds in this system are higher compared to either the discharge—only system (without the photocatalyst) or the photocatalyst—only system (without high voltage discharge), and the higher rates of degradation of these compounds in the photoelectrocatalytic system are attributed to the reduced rate of electron-hole recombination inTiO2.


RSC Advances ◽  
2017 ◽  
Vol 7 (77) ◽  
pp. 48853-48860 ◽  
Author(s):  
Aditya Ashok ◽  
S. N. Vijayaraghavan ◽  
Shantikumar V. Nair ◽  
Mariyappan Shanmugam

MoO3 thin film recombination barrier layer suppresses electron–hole recombination at the FTO–TiO2 interface and facilitates charge transport.


1995 ◽  
Vol 39 ◽  
pp. 659-664 ◽  
Author(s):  
Kenji Ishida ◽  
Akinori Kita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Shoichi Kal ◽  
...  

Thin film technology is rapidly evolving today, and the characterization of the thin film and its surface have become very important issue not only from scientific but also technological viewpoints. Although x-ray diffraction measurements have been used as suitable evaluation methods in crystallography studies, its application to the structural evaluation of the thin films, especially organic one having the low electron densities, is not easy due to the small amounts of scattering volume and the high obstructive scattering noise from the substrate. However, the x-ray diffraction measurements under grazing incidence will aid not only in overcoming the such problems but also in analyzing in-plane structure of the thin films. Therefore, so-called grazing incidence x-ray diffraction (GIXD) has been recognized as one of the most powerful tools for the surface and thin film studies.


2014 ◽  
Vol 895 ◽  
pp. 407-410
Author(s):  
Yeo Lee Kong ◽  
S.V. Muniandy ◽  
M.S. Fakir ◽  
K. Sulaiman

Surface morphology of thin films can be efficiently characterized using power spectral density method. Spectral based parameters from surface models can then be linked to electrical conductivity of thin films used for fabricating organic photovoltaic devices. In this study, the surface morphologies of the organic thin films phthalocyanine tetrasulfonic acid tetrasodium (TsNiPc) are investigated using atomic force microscopy. The thin film samples are imaged at 40-minutes and 120-minutes after the solvent treatment. The spectral exponent β is determined from the slope of PSD log-log plot and the fractal dimension D of each film is calculated based on fractal relation β = 8 2D. The relationship between surface roughness and fractal dimension with respect to electrical properties of thin film is discussed.


1992 ◽  
Vol 247 ◽  
Author(s):  
David Denenberg ◽  
Austin R. Blew

ABSTRACT; This paper describes the use of advanced circuitry nondestructive eddy current techniques to map organic Thin Films. Surface profiles, contour maps and diameter scans are obtained from the process wafers tested providing the necessary information to control the processes for maximum yield.


2019 ◽  
Vol 7 (44) ◽  
pp. 13778-13785
Author(s):  
Shuya Wang ◽  
Zhan Wei ◽  
Yahan Yang ◽  
Xiaoli Zhao ◽  
Qingxin Tang ◽  
...  

A facile strategy to recrystallize an organic semiconductor thin film to attain the desirable smooth morphology for boosting carrier mobility.


IUCrJ ◽  
2017 ◽  
Vol 4 (5) ◽  
pp. 555-559 ◽  
Author(s):  
Chenyang Shi ◽  
Rattavut Teerakapibal ◽  
Lian Yu ◽  
Geoff G. Z. Zhang

Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate glass substrate of equal thickness. The atomic pair distribution function derived from the thin-film measurement is in excellent agreement with that from bulk measurements. This ability to measure the total scattering of amorphous organic thin films in transmission will enable accuratein situstructural studies for a wide range of materials.


2002 ◽  
Vol 738 ◽  
Author(s):  
Lucas Pérez ◽  
Oscar de Abril ◽  
Claudio Aroca ◽  
Pedro Sánchez ◽  
Eloísa López ◽  
...  

ABSTRACTThin films and arrays of lines of magnetic CoNiFe alloy have been produced by electrodeposition. A magnetic field was applied during the electrodeposition process in order to induce a magnetic anisotropy in the sample. The dependence of the magnetic properties and the magnetic domain structures on the thickness of the films is reported. In addition to this, the magnetic properties and the domain structure of a thin film and an array of lines, with the same thickness and deposited in the same conditions, have been compared. An increase in the coercivity of the array of lines has been shown.


1991 ◽  
Vol 243 ◽  
Author(s):  
Peter Zurcher ◽  
Raymond P. Jones ◽  
Yongchen Sun ◽  
R.L. Cone

AbstractPhotoluminescence (PL) excited at 1.7K with a N2-Laser (3.679eV) was used to investigate defect related electron-hole recombination transitions in ferroelectric PZT thin films. The interaction of doping, heat treatment, and hydrogen with the defect related PL spectrum has been studied. Donor/acceptor related transitions between 3.0 and 3.5eV and deep trap transitions between 2.0 and 2.6eV have been found. Certain heat treatments produce high densities of deep trap transitions in Pb(Zr0.48Ti0.52)03 thin films but not in 6% La doped PZT; different treatments are neccessary to produce similar deep trap transitions in the doped films. Hydrogen anneals eliminate the strongest deep trap transition at 2.15eV in both undoped and La-doped PZT films; however the donor/acceptor transitions are affected differently. Correlation with electrical properties seems to indicate the expected result: smaller defect densities are associated with better electrical performance.


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