scholarly journals The Electrical Characteristics Model of GaN/InGaN/GaN Heterostructure in InGaN-based LED

2012 ◽  
Vol 4 (2) ◽  
Author(s):  
Budi Mulyanti ◽  
Lilik Hasanah ◽  
Khairul Rijal
Keyword(s):  
Electrical Characteristics ◽  
Gan Heterostructure

Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
A. Szczesny ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Power ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Thermal Reliability ◽  
Uv Detectors ◽  
Gate Electrodes ◽  
Gan Hemt ◽  
Gan Heterostructure

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

Effect of two step GaN buffer on the structural and electrical characteristics in AlGaN/GaN heterostructure

Vacuum ◽  
2020 ◽  
Vol 178 ◽  
pp. 109442 ◽  
Author(s):  
Akhilesh Pandey ◽  
Vikash K. Singh ◽  
Sandeep Dalal ◽  
Rajesh K. Bag ◽  
Kapil Narang ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Gan Heterostructure

scholarly journals Estudo dos efeitos da dose total ionizante (TID) em um transistor comercial de lata mobilidade de elétrons (HEMT), baseado na hetroestrutura AIGaN/GaN

2020 ◽  
Author(s):  
◽  
A. C. Vilas Bôas
Keyword(s):  
High Electron Mobility Transistor ◽  
Harsh Environments ◽  
Particle Accelerators ◽  
High Electron ◽  
Electrical Characteristics ◽  
Electrical Parameters ◽  
X Ray ◽  
Gan Hemt ◽  
Gan Heterostructure ◽  
Temperature Test

This work presents a systematic study on a commercial high electron mobility transistor based on the AlGaN / GaN heterostructure (GaN HEMT). The study evaluates its robustness to different radiation doses, more specifically, its robustness to the effects of the total ionizing dose (TID) irradiated from an X-ray source with an effective energy of 10 keV. The accumulated dose varies from up to 350 krad (Si). Therefore, for this purpose, three tests were performed on the commercial transistor, GS61008T. First, the acquisition of parameters: threshold voltage (VTH), Transconductance (gm), off current (Ioff) and sub-threshold slope (S) before, during and after exposure to radiation. Then, the switching test, where the rise (tr) and fall (tf) times were aquired, pre and post irradiation, in two diffrent frequency, 100 Hz and 100 kHz. Moreover, the temperature test, where the sample varied from 223 K (-50ºC) to 348 K (75 ºC) to evaluate its robustness for the temperature variation after having accumulated 350 krad (Si). In addition, for a better understanding of the effects of TID on the sample, all tests were performed in two different polarization modes. The on mode (VGS = 3 V and VDS = 0 V), and the off mode (VGS = VDS = 0 V). The characteristic electrical parameters of the transistor were extracted using the characteristic curves IDxVD, IDxVG and IDxt. Curves, that were obtained using National Instrument’s PXI, with programmable sources and an X-ray diffractometer. The results showed that for the devices analyzed, for this GaN COTS the effects resulting from ionizing radiation (TID), with doses up to 350 krad (Si), are minimal, and also showed a quick and effective recovery of their electrical characteristics after annealing at room temperature, especially when irradiated polarized at on mode. Therefore, indicating that they are good candidates for use in harsh environments, as is the case of aerospace environments, particle accelerators environments and nuclear reactors

scholarly journals EFFECT OF AlN LAYERS ON THE AlxGa1-xN/GaN GROWN ON SAPPHIRE SUBSTRATES

2019 ◽  
Author(s):  
Kheam Bun
Keyword(s):  
Surface Roughness ◽  
Sapphire Substrate ◽  
Electronic Devices ◽  
Lower Surface ◽  
Experimental Results ◽  
Power Electronic ◽  
Electrical Characteristics ◽  
Sapphire Substrates ◽  
Gan Heterostructure

The effect of a thin AlN layer inserted between AlxGa1-xN/GaN heterostructures grown on sapphire substrates was investigated for possible application in opto-electronic and power electronic devices. The heterostructures with two different Al compositions (0.35 and 0.49) were applied to study. After growing a thin AlN interlayer (~10nm) on the buffer GaN/AlN/sapphire substrate, then a thick AlxGa1-xN/GaN heterostructure were grown and investigated the Al mole fractions. Low rocking curves were also achieved with 0.35 and 0.48 for the 0.3 and 0.49 Al compositions, respectively. The experimental results show that with an increasing of Al composition, the crystallinity is also improved with lower surface roughness. The AlxGa1-xN/GaN heterostructures with 0.35 and 0.49 Al compositions were also investigated the electrical characteristics to confirm that they are suitable for development in optoelectronic and power electronic devices.

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