scholarly journals A SIMPLE METHOD TO CALCULATE THE DISPLACEMENT DAMAGE CROSS SECTION OF SILICON CARBIDE

2014 ◽  
Vol 46 (4) ◽  
pp. 475-480 ◽  
Author(s):  
JONGHWA CHANG ◽  
JIN-YOUNG CHO ◽  
CHOONG-SUP GIL ◽  
WON-JAE LEE
Keyword(s):  
Silicon Carbide ◽  
Cross Section ◽  
Displacement Damage ◽  
Simple Method

scholarly journals WAVE TRANSMISSION THROUGH TRAPEZOIDAL BREAKWATERS

1978 ◽  
Vol 1 (16) ◽  
pp. 129 ◽  
Author(s):  
Ole Secher Madsen ◽  
Paisal Shusang ◽  
Sue Ann Hanson
Keyword(s):  
Energy Dissipation ◽  
Approximate Method ◽  
Cross Section ◽  
Wave Energy ◽  
Graphical Form ◽  
Dissipated Energy ◽  
Simple Method ◽  
Reflection And Transmission ◽  
Transmission Coefficients

In a previous paper Madsen and White (1977) developed an approximate method for the determination of reflection and transmission characteristics of multi-layered, porous rubble-mound breakwaters of trapezoidal cross-section. This approximate method was based on the assumption that the energy dissipation associated with the wave-structure interaction could be considered as two separate mechanisms: (1) an external, frictional dissipation on the seaward slope; (2) an internal dissipation within the porous structure. The external dissipation on the seaward slope was evaluated from the semi-theoretical analysis of energy dissipation on rough, impermeable slopes developed by Madsen and White (1975). The remaining wave energy was represented by an equivalent wave incident on a hydraulically equivalent porous breakwater of rectangular cross-section. The partitioning of the remaining wave energy among reflected, transmitted and internally dissipated energy was evaluated as described by Madsen (1974), leading to a determination of the reflection and transmission coefficients of the structure. The advantage of this previous approximate method was its ease of use. Input data requirements were limited to quantities which would either be known (water depth, wave characteristics, breakwater geometry, and stone sizes) or could be estimated (porosity) by the design engineer. This feature was achieved by the employment of empirical relationships for the parameterization of the external and internal energy dissipation mechanisms. General solutions were presented in graphical form so that calculations could proceed using no more sophisticated equipment than a hand calculator (or a slide rule). This simple method gave estimates of transmission coefficients in excellent agreement with laboratory measurements whereas its ability to predict reflection coefficients left a lot to be desired.

scholarly journals Simple method for the growth of 4H silicon carbide on silicon substrate

AIP Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 035201 ◽  
Author(s):  
M. Asghar ◽  
M. Y. Shahid ◽  
F. Iqbal ◽  
K. Fatima ◽  
Muhammad Asif Nawaz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Simple Method

Displacement damage cross sections for neutron-irradiated silicon carbide

2002 ◽  
Vol 307-311 ◽  
pp. 895-899 ◽  
Author(s):  
H.L. Heinisch ◽  
L.R. Greenwood ◽  
W.J. Weber ◽  
R.E. Williford
Keyword(s):  
Silicon Carbide ◽  
Cross Sections ◽  
Displacement Damage

Simple method for fabrication of microchannels in silicon carbide

2015 ◽  
Vol 27 (2) ◽  
pp. 022002 ◽  
Author(s):  
Vanthanh Khuat ◽  
Jinhai Si ◽  
Tao Chen ◽  
Vanluu Dao ◽  
Xun Hou
Keyword(s):  
Silicon Carbide ◽  
Simple Method

A Method to Estimate Cross-Sectional Stress Distributions on Reinforced Nozzle Corners Under Internal Pressure

2019 ◽  
Author(s):  
Chang-Sik Oh ◽  
Tae-Kwang Song ◽  
Sang-Min Lee
Keyword(s):  
Internal Pressure ◽  
Cross Section ◽  
Pressure Vessels ◽  
Fe Analysis ◽  
Stress Distributions ◽  
Corner Crack ◽  
Cross Sectional ◽  
Simple Method ◽  
Geometric Variables ◽  
Good Agreement

Abstract Stress distribution through the nozzle corner cross-section may be required to calculate stress intensity factor (SIF) for a nozzle corner crack in accordance with ASME Section XI Nonmandatory Appendix G. This paper proposes a simple method to predict nozzle corner cross-section stress distributions on reinforced nozzle corners of pressure vessels under internal pressure. This method includes simplified equations for predicting stresses on the inner surfaces of the nozzle corner region. These equations are expressed in terms of stress concentration factor (SCF) and geometric variables. Approximate SCF solutions for the reinforced nozzle corners are also proposed. Stress distributions using the proposed method are compared with finite element (FE) analysis results of nozzle-vessel intersections of various geometric dimensions, and agreements are quite good within postulated crack depths. Furthermore, SIFs calculated from the estimated stress distributions in accordance with ASME Section XI Nonmandatory Appendix G are compared with those from the FE results, showing good agreement.

Computer Simulation of Displacement Damage in Silicon Carbide

2004 ◽  
Vol 851 ◽  
Author(s):  
R. Devanathan ◽  
F. Gao ◽  
W. J. Weber
Keyword(s):  
Silicon Carbide ◽  
Radiation Effects ◽  
Threshold Energy ◽  
High Energy ◽  
Dynamics Simulation ◽  
Displacement Damage ◽  
Energy Cascades ◽  
Displacement Threshold ◽  
Atom Energy ◽  
Shed Light

ABSTRACTWe have performed molecular dynamics simulation of displacement events on silicon and carbon sublattices in silicon carbide for displacement doses ranging from 0.005 to 0.5 displacements per atom. Our results indicate that the displacement threshold energy is about 21 eV for C and 35 eV for Si, and amorphization can occur by accumulation of displacement damage regardless of whether Si or C is displaced. In addition, we have simulated defect production in high-energy cascades as a function of the primary knock-on atom energy and observed features that are different from the case of damage accumulation in Si. These systematic studies shed light on the phenomenon of non-ionizing energy loss that is relevant to understanding space radiation effects in semiconductor devices.

A Simple Method of Producing Extremely Pure Crystals of α-Silicon Carbide

Nature ◽  
1966 ◽  
Vol 211 (5050) ◽  
pp. 731-732 ◽  
Author(s):  
E. J. DOSER
Keyword(s):  
Silicon Carbide ◽  
Simple Method
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