A Simple Method of Producing Extremely Pure Crystals of α-Silicon Carbide

Nature ◽  
1966 ◽  
Vol 211 (5050) ◽  
pp. 731-732 ◽  
Author(s):  
E. J. DOSER
Keyword(s):  
Silicon Carbide ◽  
Simple Method

scholarly journals Simple method for the growth of 4H silicon carbide on silicon substrate

AIP Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 035201 ◽  
Author(s):  
M. Asghar ◽  
M. Y. Shahid ◽  
F. Iqbal ◽  
K. Fatima ◽  
Muhammad Asif Nawaz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Simple Method

Simple method for fabrication of microchannels in silicon carbide

2015 ◽  
Vol 27 (2) ◽  
pp. 022002 ◽  
Author(s):  
Vanthanh Khuat ◽  
Jinhai Si ◽  
Tao Chen ◽  
Vanluu Dao ◽  
Xun Hou
Keyword(s):  
Silicon Carbide ◽  
Simple Method

scholarly journals A SIMPLE METHOD TO CALCULATE THE DISPLACEMENT DAMAGE CROSS SECTION OF SILICON CARBIDE

2014 ◽  
Vol 46 (4) ◽  
pp. 475-480 ◽  
Author(s):  
JONGHWA CHANG ◽  
JIN-YOUNG CHO ◽  
CHOONG-SUP GIL ◽  
WON-JAE LEE
Keyword(s):  
Silicon Carbide ◽  
Cross Section ◽  
Displacement Damage ◽  
Simple Method

A Simple Method for the Synthesis of Silicon Carbide Nanorods

2002 ◽  
Vol 2 (5) ◽  
pp. 453-456 ◽  
Author(s):  
I. N. Kholmanov ◽  
A. Kharlamov ◽  
E. Barborini ◽  
C. Lenardi ◽  
A. Li Bassi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Simple Method

Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers

2003 ◽  
Vol 433-436 ◽  
pp. 357-360
Author(s):  
M. Mier ◽  
John Boeckl ◽  
Matthew D. Roth ◽  
Cengiz M. Balkas ◽  
M. Nelson
Keyword(s):  
Silicon Carbide ◽  
Simple Method

Grayscale Junction Termination for High-Voltage SiC Devices

2009 ◽  
Vol 615-617 ◽  
pp. 691-694 ◽  
Author(s):  
Eugene A. Imhoff ◽  
Fritz J. Kub ◽  
Karl D. Hobart
Keyword(s):  
Silicon Carbide ◽  
High Resolution ◽  
High Voltage ◽  
Doping Profile ◽  
Guard Ring ◽  
Field Profile ◽  
High Voltage Electrode ◽  
Simple Method ◽  
Pin Diodes ◽  
Edge Termination

In silicon carbide devices used above around 2.4 kV, effective anode edge termination usually requires a high-resolution floating guard ring implant or multiple lithography/implant cycles to effect a multi-zone junction termination extension. In general the goal is to produce a smoothly tapered field profile to prevent high-voltage field-crowding that causes premature breakdown at the edge of the high voltage electrode. Using a much simpler grayscale photolithographic technique and a single termination implant, we directly produce the desired tapered doping profile. The effectiveness of this termination is shown by the near-ideal (6.1 kV) breakdown measured in PiN diodes made with a 38 µm intrinsic layer. The simple method is applicable to the fabrication of many high-voltage devices.

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

A simple way for producing holographic filters suitable for image improvement

1978 ◽  
Vol 36 (1) ◽  
pp. 226-227
Author(s):  
K.-H. Herrmann ◽  
E. Reuber ◽  
P. Schiske
Keyword(s):  
Transfer Functions ◽  
Diffraction Order ◽  
Lateral Position ◽  
Simple Method ◽  
Spatial Frequencies ◽  
Resolution Electron ◽  
Wiener Filters ◽  
Image Improvement ◽  
Optical Reconstruction ◽  
Set Up

Aposteriori deblurring of high resolution electron micrographs of weak phase objects can be performed by holographic filters [1,2] which are arranged in the Fourier domain of a light-optical reconstruction set-up. According to the diffraction efficiency and the lateral position of the grating structure, the filters permit adjustment of the amplitudes and phases of the spatial frequencies in the image which is obtained in the first diffraction order.In the case of bright field imaging with axial illumination, the Contrast Transfer Functions (CTF) are oscillating, but real. For different imageforming conditions and several signal-to-noise ratios an extensive set of Wiener-filters should be available. A simple method of producing such filters by only photographic and mechanical means will be described here.A transparent master grating with 6.25 lines/mm and 160 mm diameter was produced by a high precision computer plotter. It is photographed through a rotating mask, plotted by a standard plotter.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

Rotary Beveling for In Situ Thin-Section Microscopy of Cell Cultures

1981 ◽  
Vol 39 ◽  
pp. 550-551
Author(s):  
Dean A. Handley ◽  
Jack T. Alexander ◽  
Shu Chien
Keyword(s):  
Cell Growth ◽  
Cell Cultures ◽  
Molecular Interactions ◽  
Convenient Method ◽  
Petri Dish ◽  
Simple Method ◽  
Thin Section Microscopy ◽  
Thin Sectioning ◽  
Organic Fluids

In situ preparation of cell cultures for ultrastructural investigations is a convenient method by which fixation, dehydration and embedment are carried out in the culture petri dish. The in situ method offers the advantage of preserving the native orientation of cell-cell interactions, junctional regions and overlapping configurations. In order to section after embedment, the petri dish is usually separated from the polymerized resin by either differential cryo-contraction or solvation in organic fluids. The remaining resin block must be re-embedded before sectioning. Although removal of the petri dish may not disrupt the native cellular geometry, it does sacrifice what is now recognized as an important characteristic of cell growth: cell-substratum molecular interactions. To preserve the topographic cell-substratum relationship, we developed a simple method of tapered rotary beveling to reduce the petri dish thickness to a dimension suitable for direct thin sectioning.

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