scholarly journals Role of Sandwich Cu Layer in and Effect of Self-Bias on Nanomechanical Properties of Copper/Diamond-Like Carbon Bilayer Films

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Neeraj Dwivedi ◽  
Sushil Kumar ◽  
Hitendra K. Malik ◽  
C. M. S. Rauthan ◽  
O. S. Panwar
Keyword(s):  
Chemical Vapor ◽  
Industrial Applications ◽  
Rf Plasma ◽  
Bilayer Film ◽  
Magnetic Storage ◽  
Potential Candidate ◽  
Nanomechanical Properties ◽  
Bilayer Films ◽  
Self Bias

The role of sandwich Cu layer in and effect of self-bias on structural and nanomechanical properties of Cu/DLC bilayer films have been explored. Cu/DLC bilayer films were grown, under varied self-bias from −125 to −225 V, using hybrid system involving radio-frequency- (RF-) plasma-enhanced chemical vapor deposition and RF-sputtering units. Surface topography and mean roughness was studied by atomic force microscope and then correlated with mechanical properties. The addition of sandwich Cu layer in DLC reduces its residual stress and does not affect bilayer film hardness and elastic modulus. Load versus displacement was also employed to estimate various other mechanical parameters, which further correlated with self-bias and structural properties. These Cu/DLC bilayer films seem to be a potential candidate for various industrial applications such as hard and protective coating on cutting tools, solar cells, and wear resistance coating on magnetic storage media.

Influence of the Plasma Condition on the Morphology of Vertically Aligned Carbon Nanotube Films Grown by RF Plasma Chemical Vapor Deposition

2003 ◽  
Vol 10 (04) ◽  
pp. 611-615 ◽  
Author(s):  
Takashi Ikuno ◽  
Syunji Takahashi ◽  
Kazunori Kamada ◽  
Shigeharu Ohkura ◽  
Shin-Ich Honda ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Plasma Condition ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Bias ◽  
Vertically Aligned

Vertically aligned carbon nanotube (VACNT) films have been grown by RF plasma chemical vapor deposition (RF-PECVD) with a controlling plasma condition. From the in situ optical emission spectroscopy (OES) and self-bias measurements, we have investigated the relationship between the morphology of VACNTs and the plasma condition in PECVD. CH radical and atomic hydrogen peaks were prominent in the OES spectra of CH 4 plasma. The plasma condition was changed by varying the interelectrode distance in PECVD. With increasing interelectrode distance, the diameter and density of VACNTs increased as a result of the increase in plasma density, the fraction of CH radicals, and self-bias. It is likely that the fraction of CH radicals in plasma influences promotion of the growth of CNTs, while the self-bias induces their vertical alignment.

Substrate Effect on the Diamond-Like Carbon Films Synthesized by RF Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 3574-3579 ◽  
Author(s):  
S.S. Tzeng ◽  
Wei Min Wu ◽  
J.S. Hsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
The Self ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Working Pressure ◽  
Glass Substrates ◽  
Self Bias

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using methane as carbon source. Effect of substrate on the growth of DLC films was investigated by using four different substrate materials, silicon wafer (100), glass, flat-polished and mirror-polished alumina. The carbon films were deposited at four different self-bias voltages (-157 V, -403 V, -500 V and -590 V) by changing the plasma power under fixed flow rate and working pressure. Raman analyses indicated that DLC films were deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, and polymer-like carbon films were obtained at -157 V. For the alumina substrates, different Raman results were observed for flat-polished and mirror-polished alumina substrates. The hardness of DLC films, deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, was within 16~20 GPa using nanoindentation technique.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Interactions between an Associative Amphiphilic Block Polyelectrolyte and Surfactants in Water: Effect of Charge Type on Solution Properties and Aggregation

Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1729
Author(s):  
Patrizio Raffa
Keyword(s):  
Surface Tension ◽  
Self Assembly ◽  
Interaction Model ◽  
Industrial Applications ◽  
Molecular Organization ◽  
Different Types ◽  
Solution Rheology ◽  
Interesting Class ◽  
First Time

The study of interactions between polyelectrolytes (PE) and surfactants is of great interest for both fundamental and applied research. These mixtures can represent, for example, models of self-assembly and molecular organization in biological systems, but they are also relevant in industrial applications. Amphiphilic block polyelectrolytes represent an interesting class of PE, but their interactions with surfactants have not been extensively explored so far, most studies being restricted to non-associating PE. In this work, interactions between an anionic amphiphilic triblock polyelectrolyte and different types of surfactants bearing respectively negative, positive and no charge, are investigated via surface tension and solution rheology measurements for the first time. It is evidenced that the surfactants have different effects on viscosity and surface tension, depending on their charge type. Micellization of the surfactant is affected by the presence of the polymer in all cases; shear viscosity of polymer solutions decreases in presence of the same charge or nonionic surfactants, while the opposite charge surfactant causes precipitation. This study highlights the importance of the charge type, and the role of the associating hydrophobic block in the PE structure, on the solution behavior of the mixtures. Moreover, a possible interaction model is proposed, based on the obtained data.

Study of the Role of Small Additions of Zr in the CVD- FBR Aluminization Process

2009 ◽  
Vol 289-292 ◽  
pp. 293-300
Author(s):  
L. Sánchez ◽  
F.J. Bolívar ◽  
M.P. Hierro ◽  
F.J. Pérez
Keyword(s):  
Fluidized Bed ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fluidized Bed Reactor ◽  
Iron Aluminide ◽  
Martensitic Steels ◽  
Aluminide Coatings ◽  
Deposition Parameters ◽  
Zirconium Powder

In this work, iron aluminide coatings were developed by Chemical Vapor Deposition in Fluidized Bed Reactor (CVD-FBR) on ferritic-martensitic steels. Small additions of zirconium powder were introduced in the fluidized bed; as a consequence, the obtained coatings are thicker than that without zirconium additions. When Zr powders are added in the fluidized bed, the deposition atmosphere drastically changes, leading to increase the deposition rate. Thermodynamic calculations were carried out to simulate the modifications in the CVD atmosphere in the Al/Zr deposition system in comparison to the single aluminization. In order to optimize the conditions of the deposition, parameters such as temperature and concentration of zirconium introduced into the bed were evaluated and compared with the results obtained for the single aluminum deposition.

scholarly journals Nanofabrication using home-made RF plasma coupled chemical vapour deposition system

2014 ◽  
Vol 32 ◽  
pp. 1460342
Author(s):  
Si Ci Ong ◽  
Usman Ilyas ◽  
Rajdeep Singh Rawat
Keyword(s):  
Chemical Vapour ◽  
Chemical Vapor ◽  
Wide Band ◽  
Zno Nanowires ◽  
Operating Conditions ◽  
Rf Plasma ◽  
Zno Nanostructures ◽  
Energetic Ions ◽  
Cvd Method ◽  
Etching Effect

Zinc oxide, ZnO , a popular semiconductor material with a wide band gap (3.37 eV) and high binding energy of the exciton (60 meV), has numerous applications such as in optoelectronics, chemical/biological sensors, and drug delivery. This project aims to (i) optimize the operating conditions for growth of ZnO nanostructures using the chemical vapor deposition (CVD) method, and (ii) investigate the effects of coupling radiofrequency (RF) plasma to the CVD method on the quality of ZnO nanostructures. First, ZnO nanowires were synthesized using a home-made reaction setup on gold-coated and non-coated Si (100) substrates at 950 °C. XRD, SEM, EDX, and PL measurements were used for characterizations and it was found that a deposition duration of 10 minutes produced the most well-defined ZnO nanowires. SEM analysis revealed that the nanowires had diameters ranging from 30-100 mm and lengths ranging from 1-4 µm. In addition, PL analysis showed strong UV emission at 380 nm, making it suitable for UV lasing. Next, RF plasma was introduced for 30 minutes. Both remote and in situ RF plasma produced less satisfactory ZnO nanostructures with poorer crystalline structure, surface morphology, and optical properties due to etching effect of energetic ions produced from plasma. However, a reduction in plasma discharge duration to 10 minutes produced thicker and shorter ZnO nanostructures. Based on experimentation conducted, it is insufficient to conclude that RF plasma cannot aid in producing well-defined ZnO nanostructures. It can be deduced that the etching effect of energetic ions outweighed the increased oxygen radical production in RF plasma nanofabrication.

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