scholarly journals Stable Emission of SnO2 Nanowires Array at Low Field

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
Lingjie Wang ◽  
Jinyang Lin ◽  
Yun Ye ◽  
Tailiang Guo

SnO2 nanowires were synthesized by thermal evaporation, and the field emission characteristics of SnO2 nanowires are investigated in detail. The results show that the turn-on field is as low as 1.39 V/μm. And the fluctuation of field emission currents is as low as 2.8% for 24 h. The results reveal that SnO2 nanowires hold promise for field emission display application.

1996 ◽  
Vol 424 ◽  
Author(s):  
J. Y. Shim ◽  
E. J. Chi ◽  
S. J. Rho ◽  
H. K. Baik

ABSTRACTThe field emission characteristics of the Si emitters and the diamond coated Si emitters are investigated. The Fowler-Nordheim plots of the two types of Si emitters show linear slopes. It means that the I-V characteristics follow the Fowler-Nordheim relation. Field emission for the two types of diamond coated Si emitters exhibits significant enhancement both in turn-on voltage and total emission current. The Raman spectrum shows that the high intensity graphite peak is observed with diamond peak and thereby large amounts of graphite may be included in the diamond grain boundary. It seems to be thought that the graphite participates in the low field emission. However, further investigations are needed to understand whether the graphite may enhance the emission characteristics of diamond or not.


2011 ◽  
Vol 110-116 ◽  
pp. 1918-1922 ◽  
Author(s):  
Yong Ai Zhang ◽  
Jin Yang Lin ◽  
Chao Xing Wu ◽  
Tai Liang Guo

Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/µm at current density of 10µA/cm2 and its the threshold field at current density of 1mA/cm2 is about 6.56 V/µm at an emitter-anode gap of 400µm. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/µm. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.


2014 ◽  
Vol 633-634 ◽  
pp. 21-24
Author(s):  
Yan Ning Yang ◽  
Zhi Yong Zhang ◽  
Wei Xia Li ◽  
Chun Xue Zhai ◽  
Qiao Ping Liu ◽  
...  

The test of nano-diamond cathode field emission characteristics was conducted by changing the vacuum, the influence of vacuum change on nano-diamond field emission characteristics was also explored. It was found that under the condition of low vacuum, nano-diamond field emission turn-on field is relatively high, as the vacuum increases, turn-on field decreases gradually, and current density increases. When system vacuum reaches to above 10-4Pa level, turn-on field becomes stable, the stable value is 4.5 V/μm; and current density also becomes stable, the stable value is 117 μA/cm2; the luminescence effect of anode which is 200μm distant from the cathode in the vacuum chamber also becomes stable. Results show that 10-4Pa is system vacuum limit parameter of stable working of field emission display, the experiment provides a basis to the design and manufacture of nano-diamond field emission display.


2011 ◽  
Vol 347-353 ◽  
pp. 4008-4011
Author(s):  
Shao Lin Xue ◽  
Shu Xian Wu ◽  
Ran Huang ◽  
Zi Xin Jiang ◽  
Jian Fang Fang

This paper presented a novel post-treatment method of He plasma,which could effectively improve the field emission characteristics of screen-printed CNTs cathodes. Notable changes in the surface morphologies of screen-printed CNTs cathodes were investigated by scanning electron micro scope (SEM) as the f unction of treatment by He plasma.The results showed the post-treated CNTs cathodes hold lower turn-on electric field,higher field emission current density,more emission sites,and better uniformity than those of untreated ones.


Shinku ◽  
2007 ◽  
Vol 50 (5) ◽  
pp. 324-327 ◽  
Author(s):  
Mizumoto USHIROZAWA ◽  
Kei HAGIWARA ◽  
Toshihiro YAMAMOTO ◽  
Kuniyoshi YOKOO

2011 ◽  
Vol 694 ◽  
pp. 418-422 ◽  
Author(s):  
Ling Jie Wang ◽  
Cao Xing Wu ◽  
Yun Ye ◽  
Tai Liang Guo

In this paper, SnO2 nanowires were synthesized by thermal evaporation. The structure and morphology of SnO2 nanowires were investigated in detail, and then the nanowires were transferred to cathode electrode by printing. Field-emission measurement revealed that the average luminance of SnO2 nanowires FE-BLU was 2340 cd/m2 with the uniformity of 88.1% when the applied field was 3 V/μm. The results demonstrated that the FE-BLU based on SnO2 nanowires holds potential for application in the backlight of liquid crystal display (LCD).


2007 ◽  
Vol 7 (11) ◽  
pp. 3731-3735 ◽  
Author(s):  
Hyung Soo Uh ◽  
Sang Sik Park ◽  
Byung Whan Kim

We demonstrated that the diameter and the density of carbon nanotubes (CNTs) which had a close relation to electric-field-screening effect could be easily changed by the control of catalytic Ni thickness combined with NH3 plasma pretreatment. Since the diameter and the density of CNTs had a tremendous impact on the field-emission characteristics, optimized thickness of catalyst and application of plasma pretreatment greatly improved the emission efficiency of CNTs. In the field emission test using diode-type configuration, well-dispersed thinner CNTs exhibited lower turn-on voltage and higher field enhancement factor than the densely-packed CNTs. A CNT film grown using a plasma-pretreated 25 Å-thick Ni catalyst showed excellent field emission characteristics with a very low turn-on field of 1.1 V/μm @ 10 μA/cm2 and a high emission current density of 1.9 mA/cm2 @ 4.0 V/μm, respectively.


2011 ◽  
Vol 142 ◽  
pp. 58-61
Author(s):  
Yan Xia Ma

Using carbon nanotubes as cold cathode material, the panel fabrication for the diode field emission display (FED) with symmetrical electrode stripe was studied. The indium tin oxide (ITO) film was used as conduction electrode on the substrate plate surface, and the precise photolithography method was adopted as the high effective fabrication process. For the both cathode and anode plate, the whole ITO film would be etched in the bar form, and the divided bar ITO stripe would be arranged symmetrically. On the cathode plate surface, the printed silver slurry was used to form the cathode extension lines and the cathode insulation layer was formed with the sintered insulation slurry. Whether for the cathode ITO electrodes or for the anode ITO electrodes, the length of bar ITO electrode become small, which would be beneficial for reducing the panel working-voltage. The FED panel was sealed and measured, which possessed good field emission characteristics.


2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Dongmei Ban ◽  
Shaozhi Deng ◽  
Ningsheng Xu ◽  
Jun Chen ◽  
Juncong She ◽  
...  

We study the field emission characteristics of large-area films of crystallineMoO3microbelt grown on silicon substrate by thermal evaporation in air using a commercial infrared sintering furnace. It is found that their turn-on field, threshold field, resistance to microdischarge and field emission current stability are better thanMoO3nanowires,MoO3nanobelts andMoO3nanoflower. In addition, good uniform distribution of field emission sites can be observed. The physical reasons are explained responsible for such improvements on field emission characteristics ofMoO3material. These results indicate that large-areaMoO3microbelts may be suitable for cold-cathode electron source application.


2001 ◽  
Vol 692 ◽  
Author(s):  
Namwoong Paik ◽  
Michael Martin ◽  
Daeil Kim ◽  
Sungjin Kim ◽  
Steven Kim ◽  
...  

AbstractNegative Electron Affinity (NEA) of Diamond-like-Carbon (DLC) films has made DLC films a favorable candidate for field emission display (FED). It was suggested that triple-junction type structure could enhance the field emission characteristics. A triple junction is defined as the intersection of a semiconductor surface with a metal substrate in vacuum. In this study, field emission enhancement in triple junction type structures was investigated. As a metal substrate 5000 of Mo films were deposited. Then, 3000–4000 of DLC film was deposited as a semiconductor material. Thin film layers were made using a negative ion beam source. After the deposition, using an excimer laser, we removed the DLC layer and made circular shaped triple junction trenches with a diameter of 25–250 μm. The field emission characteristics such as I–V characteristics turn on voltage and emission lifetime data were obtained for a diode type field emission measurement system. Overall results show significantly enhanced performance of field emission characteristics such as uniform emission over patterned area, reduced turn on voltages and longer lifetimes can be achieved.


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