scholarly journals Color-Imaging Ellipsometer: High-Speed Measurement Apparatus of In-Plane Distribution of Thin Film.

MEMBRANE ◽  
2003 ◽  
Vol 28 (3) ◽  
pp. 155-158
Author(s):  
Daisuke Tanooka
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Color Imaging ◽  
Measurement Apparatus ◽  
Speed Measurement ◽  
Plane Distribution

Color-Imaging Ellipsometer: High-Speed Characterization of In-Plane Distribution of Film Thickness at Nano-Scale

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 877-880 ◽  
Author(s):  
Daisuke Tanooka ◽  
Eiki Adachi ◽  
Kuniaki Nagayama
Keyword(s):  
Film Thickness ◽  
High Speed ◽  
Color Imaging ◽  
Nano Scale ◽  
Plane Distribution

scholarly journals Current-limiting amplifier for high speed measurement of resistive switching data

2021 ◽  
Vol 92 (5) ◽  
pp. 054701
Author(s):  
T. Hennen ◽  
E. Wichmann ◽  
A. Elias ◽  
J. Lille ◽  
O. Mosendz ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Speed ◽  
Limiting Amplifier ◽  
Speed Measurement ◽  
Current Limiting

The Wear Features of a Plasma Thin-Film Coating on High-Speed Steel

2020 ◽  
Vol 41 (2) ◽  
pp. 160-168
Author(s):  
I. A. Rastegaev ◽  
I. I. Rastegaeva ◽  
D. L. Merson ◽  
V. A. Korotkov
Keyword(s):  
Thin Film ◽  
High Speed ◽  
High Speed Steel ◽  
Film Coating ◽  
Thin Film Coating

scholarly journals Advanced Electrode Design for Low-Voltage High-Speed Thin-Film Lithium Niobate Modulators

2021 ◽  
Vol 13 (2) ◽  
pp. 1-9
Author(s):  
Xingrui Huang ◽  
Yang Liu ◽  
Zezheng Li ◽  
Huan Guan ◽  
Qingquan Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
High Speed ◽  
Low Voltage ◽  
Electrode Design

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscope ◽  
High Speed ◽  
Normal Incidence ◽  
Organic Thin Film ◽  
X Ray ◽  
Atomic Force ◽  
Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

Development of high speed measurement system for cell-scaffold interaction

2015 ◽  
Author(s):  
Yu Hirano ◽  
Masaru Kojima ◽  
Mitsuhiro Horade ◽  
Kazuto Kamiyama ◽  
Yasushi Mae ◽  
...  
Keyword(s):  
Measurement System ◽  
High Speed ◽  
Speed Measurement ◽  
Cell Scaffold

Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP

1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling
Keyword(s):  
Optical Fiber ◽  
Measurement Technique ◽  
Thermal Processing ◽  
High Speed ◽  
Rapid Thermal Processing ◽  
Wafer Surface ◽  
Speed Measurement ◽  
Temperature Method ◽  
Emissivity Measurement ◽  
Emissivity Measurements

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.

scholarly journals High-Speed Epitaxy Using Supersonic Molecular Jets

1990 ◽  
Vol 201 ◽  
Author(s):  
Djula Eres
Keyword(s):  
Thin Film ◽  
Growth Rates ◽  
High Speed ◽  
Film Growth ◽  
Thin Film Growth ◽  
Free Form ◽  
Electrical Measurements ◽  
Growth Technique ◽  
Pulsed Jets ◽  
Gaseous Source

AbstractThis paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.

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