On Optimization of Manufacturing of Field Effect Heterotransistors Framework a Voltage Reference to Increase their Density. Influence of Miss-Match Induced Stress and Porosity of Materials on Technological Process

Purpose The purpose of this paper is to analyze and optimize the formation of field-effect heterotransistors using analytical approach. The approach makes it possible to analyze mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure. The optimization makes it possible to decrease dimensions of the heterotransistors and to increase speed of transport of charge carriers during functioning of the transistors. Design/methodology/approach The authors introduce an analytical approach for analysis of mass and heat transport, which makes it possible to take into account at one time varying in space and time parameters of the transports (diffusion coefficient, heat conduction coefficient, etc.) and nonlinearity of processes. The approach enables analysis of mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure and optimises the technological process. The optimization means it is possible to decrease dimensions of field-effect heterotransistors. Findings In this paper the authors introduce an approach to manufacture a field-effect heterotransistor with inhomogeneous doping of channel. Some recommendations to optimize technological process to manufacture more compact distribution of concentration of dopant have been formulated. Originality/value The results are original and the paper provides an approach to the manufacture of a field-effect heterotransistor.

Download Full-text

An approach to model and optimization of manufacturing of an enhanced swing differential Colpitts oscillator. on influence of miss-match induced stress

Journal of Kufa Physics ◽

10.31257/2018/jkp/2020/120202 ◽

2020 ◽

Vol 12 (02) ◽

pp. 12-32

Author(s):

E.L. Pankratov ◽

Keyword(s):

Integrated Circuits ◽

Ion Implantation ◽

Heat Transport ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Radiation Defects ◽

Colpitts Oscillator ◽

Induced Stress ◽

Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

Download Full-text

On Model of Manufacturing of an Integrated Circuits Based on Hetero-Structures Under Influence of Mismatch-Induced Stress and Porosity of Materials

Journal of Materials Science and Engineering with Advanced Technology ◽

10.18642/jmseat_7100122147 ◽

2021 ◽

Vol 23 (1) ◽

pp. 1-53

Author(s):

E. L. Pankratov ◽

Keyword(s):

Integrated Circuits ◽

Ion Implantation ◽

Heat Transport ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Radiation Defects ◽

Induced Stress ◽

Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Download Full-text