scholarly journals Estimation of Ready Queue Processing Time using Efficient Factor Type Estimator (E-F-T) in Multiprocessor Environment

2012 ◽  
Vol 48 (16) ◽  
pp. 20-27 ◽  
Author(s):  
D. Shukla ◽  
Anjali Jain
Keyword(s):  
Processing Time ◽  
Factor Type ◽  
Ready Queue

A new tool for rapid development of electron microscopy negatives and micrographs: Initial impressions of the MOHR/PRO-8 processor

1992 ◽  
Vol 50 (2) ◽  
pp. 972-973
Author(s):  
James C. Long
Keyword(s):  
Electron Microscopy ◽  
Processing Time ◽  
Rapid Development ◽  
Processing Times ◽  
Initial Impressions ◽  
Transport Method

Over the years, many techniques and products have been developed to reduce the amount of time spent in a darkroom processing electron microscopy negatives and micrographs. One of the latest tools, effective in this effort, is the Mohr/Pro-8 film and rc paper processor.At the time of writing, a unit has been recently installed in the photographic facilities of the Electron Microscopy Center at Texas A&M University. It is being evaluated for use with TEM sheet film, SEM sheet film, 35mm roll film (B&W), and rc paper.Originally designed for use in the phototypesetting industry, this processor has only recently been introduced to the field of electron microscopy.The unit is a tabletop model, approximately 1.5 × 1.5 × 2.0 ft, and uses a roller transport method of processing. It has an adjustable processing time of 2 to 6.5 minutes, dry-to-dry. The installed unit has an extended processing switch, enabling processing times of 8 to 14 minutes to be selected.

Tem analysis of multiple-energy arsenic implanted and Rta'd silicon

1987 ◽  
Vol 45 ◽  
pp. 246-247
Author(s):  
R.A. Herring
Keyword(s):  
Device Fabrication ◽  
High Concentration ◽  
Tem Analysis ◽  
Defect Clusters ◽  
High Fluences ◽  
Small Defect ◽  
Before And After ◽  
The Matrix ◽  
The Difference ◽  
Factor Type

Rapid thermal annealing (RTA) of ion-implanted Si is important for device fabrication. The defect structures of 2.5, 4.0, and 6.0 MeV As-implanted silicon irradiated to fluences of 2E14, 4E14, and 6E14, respectively, have been analyzed by electron diffraction both before and after RTA at 1100°C for 10 seconds. At such high fluences and energies the implanted As ions change the Si from crystalline to amorphous. Three distinct amorphous regions emerge due to the three implantation energies used (Fig. 1). The amorphous regions are separated from each other by crystalline Si (marked L1, L2, and L3 in Fig. 1) which contains a high concentration of small defect clusters. The small defect clusters were similar to what had been determined earlier as being amorphous zones since their contrast was principally of the structure-factor type that arises due to the difference in extinction distance between the matrix and damage regions.

Classifying the Past: Discriminant Analysis and its Application to Medieval Farming Systems

1996 ◽  
Vol 8 (1) ◽  
pp. 1-10 ◽  
Author(s):  
Ken Bartley
Keyword(s):  
Cluster Analysis ◽  
Discriminant Analysis ◽  
Processing Time ◽  
Farming Systems ◽  
Frame Of Reference ◽  
Analytical Models ◽  
Successful Implementation ◽  
Medieval Period ◽  
The Past ◽  
Livestock Management

This paper discusses the need for nationally based analytical models of the medieval period. The use of cluster analysis as a method for classifying demesne farms, by the crops they grew and their livestock management, is explained. Successful implementation of cluster analysis requires both the existence of a large base sample, to permit isolation of specific groupings within the data, and access to considerable processing time. The paper concludes by demonstrating how discriminant analysis can provide an efficient and systematic way of classifying even a single manor within a national frame of reference.

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